BAT750
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector reverse voltage
V
40
V
R
RMS reverse voltage
V
28
750
490
1500
V
R(RMS)
Forward current (continuous)
I
mA
mV
mA
A
F
Forward voltage @ I = 750mA
V
F
F
Average peak forward current; DC = 50%
I
FAV
Non repetitive forward current tՅ100S
tՅ8.3ms
I
12
5.5
FSM
Power dissipation @ T
= 25°C
P
350
286
mW
°C/W
°C
amb
tot
Typical thermal resistance, junction to ambient air
Storage temperature range
R
⍜JA
T
-55 to +150
125
stg
Junction temperature
T
°C
j
Electrical characteristics (@ T
= 25°C unless otherwise stated)
amb
Parameter
Symbol
Min.
Typ. Max. Unit Conditions
Reverse breakdown
voltage
V
V
40
60
V
I = 300A
R
(BR)R
F
(*)
Forward voltage
225
235
290
340
390
440
530
280
310
350
420
490
540
650
mV
mV
mV
mV
mV
mV
mV
I = 50mA
F
(*)
(*)
(*)
(*)
(*)
I = 100mA
F
I = 250mA
F
I = 500mA
F
I = 750mA
F
I = 1000mA
F
(*)
I = 1500mA
F
Reverse current
I
50
25
5
100
A V = 30V
R
R
Diode capacitance
Reverse recovery time
C
-
-
pF
ns
V = 25V, f = 1.0MHz
R
D
t
I = I = 100mA,
F R
rr
I = 10mA
rr
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 duty cycle Յ2%.
Issue 2 - May 2008
© Zetex Semiconductors plc 2008
2
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