5秒后页面跳转
BAT43 PDF预览

BAT43

更新时间: 2024-09-25 20:16:59
品牌 Logo 应用领域
SENSITRON /
页数 文件大小 规格书
4页 58K
描述
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DIE-2

BAT43 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DIE
包装说明:S-XXUC-N2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.40风险等级:5.2
Is Samacsys:N其他特性:LOW POWER LOSS, HIGH SURGE CAPABILITY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:S-XXUC-N2
JESD-609代码:e0湿度敏感等级:1
最大非重复峰值正向电流:0.75 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:TIN LEAD
端子形式:NO LEAD端子位置:UNSPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAT43 数据手册

 浏览型号BAT43的Datasheet PDF文件第2页浏览型号BAT43的Datasheet PDF文件第3页浏览型号BAT43的Datasheet PDF文件第4页 
SENSITRON  
SEMICONDUCTOR  
BAT42 / BAT43  
TECHNICAL DATA  
DATA SHEET 675, REV. -  
SILICON SCHOTTKY RECTIFIER DIE  
Low Forward Voltage Drop  
Applications:  
·
Small signal switching  
Features:  
·
·
·
·
·
·
·
·
Low Reverse Leakage Current  
Soft Reverse Recovery at Low and High Temperature  
Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Capacity  
Guard Ring for Enhanced Durability and Long Term Reliability  
Guaranteed Reverse Avalanche Characteristics  
Electrically / Mechanically Stable during and after packaging  
Maximum Ratings(1):  
Characteristics  
Symbol  
VRWM  
IF(AV)  
Condition  
-
50% duty cycle, rectangular  
wave form  
Max.  
30  
200  
Units  
V
mA  
Peak Inverse Voltage  
Max. Average Forward  
Current  
Repetitive Peak Forward  
Current  
Max. Peak One Cycle Non-  
Repetitive Surge Current  
Max. Junction Temperature  
Max. Storage Temperature  
IFRM  
IFSM  
tp £ 1s, d £ 0.5  
500  
4
mA  
A
10 ms, Sine pulse  
TJ  
Tstg  
-
-
-55 to +125  
-55 to +150  
°C  
°C  
Electrical Characteristics(1):  
Characteristics  
Max. Forward Voltage  
Drop  
Symbol  
VF1 All  
Types  
Condition  
@ 200mA, Pulse, TJ = 25 °C  
Max.  
1.0  
Units  
V
VF2  
VF3  
VF4  
VF5  
BAT42  
BAT42  
BAT43  
BAT43  
@ 10mA, Pulse, TJ = 25 °C  
@ 50mA, Pulse, TJ = 25 °C  
@ 2mA, Pulse, TJ = 25 °C  
@ 15mA, Pulse, TJ = 25 °C  
@VR = 25V, Pulse,  
TJ = 25 °C  
0.40  
0.65  
0.33  
0.45  
0.5  
V
V
V
V
mA  
Max. Reverse Current  
IR1  
IR2  
CT  
@VR = 25V, Pulse,  
TJ = 100 °C  
@VR = 5V, TC = 25 °C  
fSIG = 1MHz,  
0.1  
8
mA  
pF  
Max. Junction  
Capacitance  
ISIG = 50mV (p-p)  
1). Tested with axial diodes.  
· 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 ·  
· World Wide Web Site - http://www.sensitron.com · E-Mail Address - sales@sensitron.com ·  

与BAT43相关器件

型号 品牌 获取价格 描述 数据表
BAT43-A DIODES

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, Silicon,
BAT43-A-F DIODES

获取价格

Rectifier Diode,
BAT43-AP MCC

获取价格

Rectifier Diode, Schottky, 1 Element, 0.2A, Silicon, DO-35, ROHS COMPLIANT PACKAGE-2
BAT43AR1 STMICROELECTRONICS

获取价格

0.2A, 30V, SILICON, SIGNAL DIODE
BAT43AR2 STMICROELECTRONICS

获取价格

0.2A, 30V, SILICON, SIGNAL DIODE
BAT43AZ1 STMICROELECTRONICS

获取价格

0.2A, 30V, SILICON, SIGNAL DIODE
BAT43AZ2 STMICROELECTRONICS

获取价格

0.2A, 30V, SILICON, SIGNAL DIODE
BAT43-B DIODES

获取价格

暂无描述
BAT43-B RECTRON

获取价格

Rectifier Diode,
BAT43B2 STMICROELECTRONICS

获取价格

0.2A, 30V, SILICON, SIGNAL DIODE