BAT42WS

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
WTE		肖特基二极管光电二极管
页数	文件大小	规格书
2页	32K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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中文翻译

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技术参数
数据手册

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BAT42WS 技术参数

类别：	二极管	配置：	Single
VRRM (V) max：	30	IF (A) max：	0.1
VF (V) max：	1	Condition1_IF (A)：	0.2
IFSM (A) max：	4	IR (uA) max：	0.5
Condition2_VR (V)：	25	trr (ns) max：	5
AEC Qualified：	No	最高工作温度：	125
最低工作温度：	-55	MSL等级：	1
生命周期：	Active	是否无铅：	Yes
符合Reach：	Yes	符合RoHS：	Yes
ECCN代码：	EAR99	Package Outlines：	SOD-523

BAT42WS 数据手册

WTE

POWER SEMICONDUCTORS

BAT42WS / BAT43WS

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

Low Turn-on Voltage

Fast Switching

PN Junction Guard Ring for Transient and

ESD Protection

Designed for Surface Mount Application

Plastic Material – UL Recognition Flammability

Classification 94V-O

SOD-323

Min

Dim

Max

2.70

1.95

1.35

0.35

0.15

0.95

—

2.30

1.75

1.15

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

0.25

0.05

Mechanical Data

0.70

0.30

Case: SOD-323, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

All Dimensions in mm

Weight: 0.004 grams (approx.)

Marking: BAT42WS L2

BAT43WS L3

Maximum Ratings ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

BAT42WS / BAT43WS

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

Forward Continuous Current (Note 1)

I^F

I^FRM

200

500

Repetitive Peak Forward Current (Note 1)

Non-Repetitive Peak Forward Surge Current

Power Dissipation

@ t < 1.0s

@ t < 10ms

I^FSM

4.0

P^d

200

K/W

°C

Typical Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

R^ꢀ^JA

T^j, T^STG

625

-55 to +125

Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage

V^(BR)R

—

@ I^RS= 100µA

BAT42WS

BAT43WS

0.4

1.0

@ I^F= 1.0mA

@ I^F= 200mA

@ I^F= 2.0mA

@ I^F= 200mA

Forward Voltage

V^F

—

0.33

1.0

Reverse Leakage Current

Junction Capacitance

I^R

C^j

—

0.5

µA

@ V_R= 25V

V_R= 1.0V, f = 1.0MHz

I^F= I^R= 10mA,

I^RR= 0.1 x I^R, R^L= 100ꢀ

Reverse Recovery Time

t^rr

—

5.0

Note: 1. Valid provided that terminals are kept at ambient temperature.

BAT42WS / BAT43WS

1 of 2

中文翻译

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与BAT42WS相关器件

型号	品牌	获取价格	描述	数据表
BAT42WS, BAT43WS	VISHAY	获取价格	Small Signal Schottky Diode
BAT42WS_04	WTE	获取价格	SURFACE MOUNT SCHOTTKY BARRIER
BAT42WS_06	WTE	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAT42WS_08	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAT42WS_09	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY BARRIER
BAT42WS_1	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAT42WS_10	FORMOSA	获取价格	200mA Surface Mount Small Signal Schottky Diodes-30V
BAT42WS_16	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY BARRIER
BAT42WS_18	HDSEMI	获取价格	S O D323 Plastic-Encapsulate Diodes
BAT42WS_R1_00001	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY BARRIER

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