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BAT42WS-G3-08 PDF预览

BAT42WS-G3-08

更新时间: 2024-02-19 07:29:21
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 91K
描述
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, GREEN PACKAGE-2

BAT42WS-G3-08 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70Factory Lead Time:10 weeks
风险等级:4.06配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.4 VJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:4 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.15 W参考标准:AEC-Q101
最大重复峰值反向电压:30 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

BAT42WS-G3-08 数据手册

 浏览型号BAT42WS-G3-08的Datasheet PDF文件第2页浏览型号BAT42WS-G3-08的Datasheet PDF文件第3页浏览型号BAT42WS-G3-08的Datasheet PDF文件第4页 
BAT42WS-G, BAT43WS-G  
www.vishay.com  
Vishay Semiconductors  
Small Signal Schottky Diode  
FEATURES  
• These diodes feature very low turn-on voltage  
and fast switching. These devices are  
protected by a PN junction guard ring against  
excessive voltage, such as electrostatic  
discharges  
• For general purpose applications  
• AEC-Q101 qualified available  
(part number on request)  
DESIGN SUPPORT TOOLS click logo to get started  
• Base P/N-G3 - green, commercial grade  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Models  
Available  
MECHANICAL DATA  
Case: SOD-323  
Weight: approx. 4.0 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
PART  
ORDERING CODE  
CIRCUIT CONFIGURATION TYPE MARKING  
REMARKS  
BAT42WS-G  
BAT43WS-G  
BAT42WS-G3-08 or BAT42WS-G3-18  
BAT43WS-G3-08 or BAT43WS-G3-18  
Single  
Single  
LC  
LD  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VRRM  
IF  
VALUE  
30  
UNIT  
V
Repetitive peak reverse voltage  
(1)  
Forward continuous current  
200  
500  
4
mA  
mA  
A
(1)  
Repetitive peak forward current  
tp < 1 s, δ < 0.5  
IFRM  
(1)  
Surge forward current  
tp < 10 ms  
IFSM  
Power dissipation (1)  
Ptot  
150  
mW  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
650  
UNIT  
K/W  
°C  
(1)  
Thermal resistance junction to ambient air  
Junction temperature  
125  
Operating temperature range  
Storage temperature range  
Top  
-55 to +125  
-55 to +150  
°C  
Tstg  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
Rev. 1.3, 02-Jun-17  
Document Number: 85238  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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