Datasheet > BASH21LT1G

BASH21LT1G

更新时间： 2024-10-01 11:13:19

品牌	Logo	应用领域
安森美 - ONSEMI		开关高压二极管
页数	文件大小	规格书
6页	218K
描述
高压开关二极管，+175°C

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BASH21LT1G 数据手册

DATA SHEET

www.onsemi.com

Switching Diode, High

Voltage, High Temperature

HIGH VOLTAGE

SWITCHING DIODE

SOT−23

BASH19L Series

CATHODE

ANODE

Features

• 175°C T

− Rated for High Temperature, Mission Critical

J(MAX)

Applications

• NSV Prefixes for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

SOT−23 (TO−236)

CASE 318

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

STYLE 8

MAXIMUM RATINGS

MARKING DIAGRAM

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

Vdc

120

200

250

BASH19

BASH20

BASH21

xxx MG

Repetitive Peak Reverse Voltage

BASH19

Vdc

RRM

120

200

250

AD7

AC7

AA7

= BASH19L

= BASH20L

= BASH21L

= Date Code

= Pb−Free Package

BASH20

BASH21

Continuous Forward Current

Peak Forward Surge Current

200

mAdc

FSM

(Note: Microdot may be in either location)

(1/2 Cycle, Sine Wave, 60 Hz)

Repetitive Peak Forward Current

0.6

FRM

ORDERING INFORMATION

(Pulse Train: T = 1 s, T

= 0.5 s)

OFF

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

Junction and Storage Temperature

Range

T , T

−55 to +175

°C

stg

Electrostatic Discharge

ESD

HM < 500

MM < 400

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

June, 2023 − Rev. 3

BASH19L/D

12 3 4 5 6

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