Datasheet > BAS70-05B5000

BAS70-05B5000

更新时间： 2022-12-01 20:27:37

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	213K
描述
Rectifier Diode, Schottky, 2 Element, 0.07A, Silicon, SOT-23, 3 PIN

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BAS70-05B5000 数据手册

BAS70...B5000 / B5003

Maximum Ratings at T = 25°C, unless otherwise specified

Parameter

Diode reverse voltage

Forward current

Symbol

Value

Unit

100

Non-repetitive peak surge forward current

Total power dissipation

FSM

°C

tot

BAS70, T ≤ 109 °C

BAS70-04, BAS70-06, T ≤ 101 °C

250

BAS70-05, T ≤ 95 °C

150

Junction temperature

Operating temperature range

Storage temperature

-55 ... 125

-55 ... 150

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

thJS

Value

Unit

K/W

BAS70

BAS70-04, BAS70-06

BAS70-05

≤ 165

≤ 195

≤ 220

Electrical Characteristics at T = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ. max.

DC Characteristics

Breakdown voltage

(BR)

= 10 µA

(BR)

0.1

Reverse current

µA

V = 50 V

Forward voltage

I = 1 mA

300

600

720

375

705

880

410

750

1000

I = 10 mA

I = 15 mA

Forward voltage matching

∆ V

I = 10 mA

¹For calculation of R

please refer to Application Note Thermal Resistance

thJA

²∆V is the difference between lowest and highestV in a multiple diode component.

2006-08-04

123 4 5 6 7

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