Datasheet > BAS40_11

BAS40_11

更新时间： 2024-01-10 07:24:44

品牌	Logo	应用领域
TSC		二极管
页数	文件大小	规格书
2页	208K
描述
200mW, Low VF, SMD Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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BAS40_11 数据手册

BAS40 / -04 / -05 / -06

SMD Schottky Barrier Diode

200mW, Low VF,

Small Signal Diode

SOT-23

Features

Metal-on-silicon Shcottky Barrier

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Unit (mm)

Unit (inch)

Min Max

Dimensions

Min

2.80

1.20

0.30

1.80

2.25

0.90

Max

Mechanical Data

Case : Flat lead SOT 23 small outline plastic package

3.00 0.110 0.118

1.40 0.047 0.055

0.50 0.012 0.020

2.00 0.071 0.079

2.55 0.089 0.100

1.20 0.035 0.043

Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

High temperature soldering guaranteed: 260°C/10s

Weight : 0.008gram (approximately)

Marking Code : 43.44.45.46

0.550 REF

0.022 REF

BAS40

BAS40-04

BAS40-05

BAS40-06

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

Value

Units

Power Dissipation

200

Repetitive Peak Reverse Voltage

Reverse Voltage

VRRM

IFRM

Repetitive Peak Forward Current

Mean Forward Current

200

Non-Repetitive Peak Forward Surge Current (Note 1)

Thermal Resistance (Junction to Ambient) (Note 2)

Junction and Storage Temperature Range

IFSM

0.6

RθJA

TJ, TSTG

357

°C/W

°C

-65 to + 125

Electrical Characteristics

Type Number

Symbol

Min

Max

Units

V(BR)

Reverse Breakdown Voltage

IR=

10μA

0.38

0.50

1.00

0.2

IF=

I^F=

1mA

10mA

40mA

Forward Voltage

μA

Reverse Leakage Current

Junction Capacitance

VR=

30V

VR=1V,

f=1.0MHz

Trr

5.0

Reverse Recovery Time IF =IR=10mA,RL=100Ω,IRR=1mA

Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)

Notes:2. Valid provided that electrodes are kept at ambient temperature

Version : D11

中文翻译

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