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BA979S-GS18 PDF预览

BA979S-GS18

更新时间: 2024-02-29 20:00:30
品牌 Logo 应用领域
威世 - VISHAY 衰减器二极管
页数 文件大小 规格书
4页 100K
描述
DIODE SILICON, PIN DIODE, DO-213AA, GLASS, QUADROMELF-2, PIN Diode

BA979S-GS18 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-213AA
包装说明:O-LELF-R2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.2
应用:ATTENUATOR最小击穿电压:30 V
外壳连接:ISOLATED配置:SINGLE
最大二极管电容:0.5 pF二极管元件材料:SILICON
最大二极管正向电阻:50 Ω二极管类型:PIN DIODE
频带:HIGH FREQUENCY TO ULTRA HIGH FREQUENCYJEDEC-95代码:DO-213AA
JESD-30 代码:O-LELF-R2JESD-609代码:e2
少数载流子标称寿命:4 µs湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:125 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):250认证状态:Not Qualified
子类别:PIN Diodes表面贴装:YES
技术:POSITIVE-INTRINSIC-NEGATIVE端子面层:Tin/Silver (Sn/Ag)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:40Base Number Matches:1

BA979S-GS18 数据手册

 浏览型号BA979S-GS18的Datasheet PDF文件第2页浏览型号BA979S-GS18的Datasheet PDF文件第3页浏览型号BA979S-GS18的Datasheet PDF文件第4页 
BA979, BA979S  
Vishay Semiconductors  
www.vishay.com  
RF PIN Diodes - Single in QuadroMELF SOD-80  
FEATURES  
• Wide frequency range 10 MHz to 1 GHz  
• AEC-Q101 qualified  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
APPLICATIONS  
• Current controlled HF resistance in adjustable  
attenuators  
MECHANICAL DATA  
Case: QuadroMELF SOD-80  
Weight: approx. 34 mg  
Cathode band color: black  
Packaging codes/options:  
GS18/10K per 13" reel (8 mm tape), 10K/box  
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box  
PARTS TABLE  
TYPE  
DIFFERENTIATION  
INTERNAL  
CONSTRUCTION  
PART  
ORDERING CODE  
TYPE MARKING  
REMARKS  
BA979  
zr > 5 k  
BA979-GS18 or BA979-GS08  
-
-
Single diode  
Single diode  
Tape and reel  
Tape and reel  
BA979S  
zr > 9 k  
BA979S-GS18 or BA979S-GS08  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PART  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
V
Reverse voltage  
Forward continuous current  
VR  
IF  
30  
50  
mA  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
on PC board  
50 mm x 50 mm x 1.6 mm  
Thermal resistance junction to ambient air  
RthJA  
500  
K/W  
Junction temperature  
Tj  
125  
°C  
°C  
Storage temperature range  
Tstg  
- 55 to + 150  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
Forward voltage  
IF = 20 mA  
VF  
IR  
CD  
rf  
1
V
Reverse current  
V
R = 30 V  
0.05  
0.5  
50  
μA  
pF  
Diode capacitance  
Differential forward resistance  
f = 100 MHz, VR = 0 V  
f = 100 MHz, IF = 1.5 mA  
BA979  
zr  
zr  
5
9
k  
k  
μs  
Reverse impedance  
f = 100 MHz, VR = 0 V  
IF = 10 mA, IR = 10 mA  
BA979S  
Minority carrier lifetime  
4
Rev. 1.6, 21-May-12  
Document Number: 85533  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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