BA982, BA983
Vishay Semiconductors
Band Switching Diodes
FEATURES
• Silicon planar diodes
• Low dynamic forward resistance
• Low diode capacitance
• High reverse impedance
• QuadroMELF package
• AEC-Q101 qualified
9612009
MECHANICAL DATA
Case: QuadroMELF SOD-80
Weight: approx. 34 mg
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
Cathode band color: black
Packaging codes/options:
• Band switching in VHF-tuners
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
BA982
BA983
TYPE DIFFERENTIATION
ORDERING CODE
REMARKS
Tape and reel
Tape and reel
V
V
R = 35 V, rf at IF 3 mA = max. 0.7 Ω
R = 35 V, rf at IF 3 mA = max. 1.2 Ω
BA982-GS18 or BA982-GS08
BA983-GS18 or BA983-GS08
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
35
UNIT
V
Reverse voltage
VR
IF
Forward continuous current
100
mA
Note
(1)
Tamb = 25 °C, unless otherwise specified
THERMAL CHARACTERISTICS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
500
UNIT
K/W
°C
On PC board
50 mm x 50 mm x 1.6 mm
Junction to ambient air
RthJA
Junction temperature
Tj
150
Storage temperature range
Tstg
- 55 to + 150
°C
Note
(1)
Tamb = 25 °C, unless otherwise specified
ELECTRICAL CHARACTERISTICS (1)
PARAMETER
Forward voltage
Reverse current
TEST CONDITION
IF = 100 mA
R = 20 V
PART
SYMBOL
VF
MIN.
TYP.
MAX.
UNIT
1000
50
mV
nA
pF
pF
pF
Ω
V
IR
f = 100 MHz, VR = 1 V
CD1
CD2
CD2
rf1
1.5
1.25
1.2
0.7
1.2
0.5
0.9
Diode capacitance
BA982
BA983
BA982
BA983
BA982
BA983
f = 100 MHz, VR = 3 V
f = 200 MHz, IF = 3 mA
f = 200 MHz, IF = 10 mA
rf1
Ω
Dynamic forward resistance
rf2
Ω
rf2
Ω
Note
(1)
Tamb = 25 °C, unless otherwise specified
Document Number: 85534
Rev. 1.6, 16-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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