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B9NC60 PDF预览

B9NC60

更新时间: 2022-10-14 18:17:06
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
10页 464K
描述
N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh?II MOSFET

B9NC60 数据手册

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STB9NC60  
STB9NC60-1  
N-CHANNEL 600V - 0.6- 9A - D2PAK/I2PAK  
PowerMesh™II MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STB9NC60  
STB9NC60-1  
600 V  
600 V  
< 0.75 Ω  
< 0.75 Ω  
9.0 A  
9.0 A  
TYPICAL R (on) = 0.6 Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
NEW HIGH VOLTAGE BENCHMARK  
GATE CHARGE MINIMIZED  
3
1
3
2
1
2
2
D PAK  
I PAK  
DESCRIPTION  
The PowerMESHII is the evolution of the first  
generation of MESH OVERLAY™. The layout re-  
finements introduced greatly improve the Ron*area  
figure of merit while keeping the device at the lead-  
ing edge for what concerns swithing speed, gate  
charge and ruggedness.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVER  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
600  
600  
±30  
9
Unit  
V
Drain-source Voltage (V = 0)  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
GS  
Gate- source Voltage  
V
I
Drain Current (continuos) at T = 25°C  
A
D
C
I
Drain Current (continuos) at T = 100°C  
5.7  
36  
A
D
C
I
(1)  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
125  
1.0  
3.5  
W
TOT  
C
Derating Factor  
W/°C  
V/ns  
dv/dt  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
– 55 to 150  
°C  
T
Max. Operating Junction Temperature  
j
(1)I 9A, di/dt 100A/µs, V V  
, T T  
(BR)DSS j JMAX  
SD  
DD  
(•)Pulse width limited by safe operating area  
February 2002  
1/10  

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