Datasheet > B85NF3LL

B85NF3LL

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅极
页数	文件大小	规格书
13页	392K
描述
N-channel 30V - 0.006ohm - 85A - D2PAK Low gate charge STripFET TM II Power MOSFET

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B85NF3LL 数据手册

STB85NF3LL

Electrical characteristics

Min Typ. Max Unit

Table 6.

Source drain diode

Parameter

Symbol

Test conditions

I_SD

Source-drain current

340

1.3

(1)

Source-drain current (pulsed)

Forward on voltage

I_SDM

(2)

I_SD= 85A, V_GS= 0

I_SD= 85A,

V_SD

Reverse recovery time

Reverse recovery charge

Reverse recovery current

105

3.4

µC

t_rr

di/dt = 100A/µs,

Q_rr

V_DD= 15V, T_J= 150°C

I_RRM

Figure 14 on page 8

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

5/13

1 2 3 456 7 8...13

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