Datasheet > B85NF3LL

B85NF3LL

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅极
页数	文件大小	规格书
13页	392K
描述
N-channel 30V - 0.006ohm - 85A - D2PAK Low gate charge STripFET TM II Power MOSFET

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B85NF3LL 数据手册

STB85NF3LL

Electrical ratings

Table 1.

Symbol

Absolute maximum ratings

Parameter

Value

Unit

V_DS

Drain-source voltage (V_GS= 0)

V_DGRDrain-gate voltage (R_GS= 20KΩ)

V_GS

Gate-source voltage

Gate-source voltage pulsed

V_GSM

(t_p≤50µs; duty cycle 25%; T_J≤150°C)

I_D

Drain current (continuous) at T_C= 25°C

Drain current (continuous) at T_C=100°C

Drain current (pulsed)

(1)

I_DM

340

P_TOTTotal dissipation at T_C= 25°C

Derating factor

110

0.73

W/°C

°C

T_stg

T_J

Storage temperature

–65 to 175

175

Max. Operating Junction Temperature

1. Pulse width limited by safe operating area

Table 2.

Symbol

Thermal data

Parameter

Value

Unit

R_thJCThermal resistance junction-case Max

R_thJAThermal resistance junction-ambient Max

0.36

62.5

°C/W

Maximum lead temperature for soldering

purpose

T_l

300

°C

3/13

1 234 5 6 7...13

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