Datasheet > B58601E3214B646

B58601E3214B646

更新时间： 2024-03-03 10:09:45

品牌	Logo	应用领域
东电化 - TDK		/
页数	文件大小	规格书
10页	535K
描述
Pressure sensor die, low pressure, open bridge

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B58601E3214B646 数据手册

Pressure sensors

C32 series

B58601E32**B615/…B646

Gauge low pressure sensor die C32/1 (open bridge)

Technical data

Absolute maximum ratings

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Supply voltage

Maximum supply voltage

Temperature ranges

Operating temperature range

V_DD

Without damage ¹⁾

T_a

–40

–50

150

165

175

°C

Storage temperature range

T_st

For t <2 h

Pressure ranges

Operating pressure ranges

Over pressure

p_r

Gauge pressure ⁴⁾

Gauge pressure ⁵⁾

Gauge pressure ⁶⁾

0 ... 0.4

0 ... 1.0

bar

p_r

p_ov

See next table

Burst pressure

p_burst

p_r

Electrical specifications

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Supply voltage / bridge resistance

Operating supply voltage

Total bridge resistance

V_DD

R_b

1.0

2.6

2.0

5.0

4.0

2.7

@ 25 °C ⁸⁾

3.3

2.3

k

10^–3/K

10^–6/K²

_Rb

_Rb

Temperature coefficient

of total bridge resistance

@ 25 °C ⁹⁾

Output signal @ V_DD= 5 V

Offset

V_o

@ 25 °C ¹⁰⁾

@ 25 °C ¹³⁾

-30

Sensitivity

See next table

–2.1

mV/bar

µV/V/K

10^–3/K

10^–6/K²

% FS¹²⁾

TCVo+

TCVo-

_S

Temperature coefficient

of offset

Unglued ¹¹⁾

–2.5

–1.9

Temperature coefficient

of the sensitivity

@ 25 °C ¹⁵⁾

_S

16)

Pressure hysteresis

p_Hys

–0.1

0.1

Long-term stability (Full scale normal output FSON = 120 mV)

17)

Temperature hysteresis of offset

Temperature cycle drift of offset

High temperature drift of offset

Long term stability of offset

THV₀

TCDV₀

HTDV₀

LTSV₀

–0.2

–0.1

±0.1

±0.05

±0.1

0.2

0.1

% FSON

17)

–0.25

–0.3

0.25

0.3

0.15

TPS PRS SD PD

2021-03-08

Please read Cautions and warnings and

Page 3 of 10

Important notes at the end of this document.

1 234 5 6 7...10

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