5秒后页面跳转
B5818W PDF预览

B5818W

更新时间: 2024-02-29 11:50:27
品牌 Logo 应用领域
SSC 肖特基二极管
页数 文件大小 规格书
4页 252K
描述
SCHOTTKY BARRIER DIODE

B5818W 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.66
二极管类型:RECTIFIER DIODEJESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Matte Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

B5818W 数据手册

 浏览型号B5818W的Datasheet PDF文件第2页浏览型号B5818W的Datasheet PDF文件第3页浏览型号B5818W的Datasheet PDF文件第4页 
B5817W-B5819W  
SCHOTTKY BARRIER DIODE  
PRODUCT SUMMARY  
SOD-123  
SOD-123 Plastic-Encapsulate Diode  
+
FEATURES  
For use in low voltage, high frequency inverters  
Free wheeling, and polarity protection applications.  
-
Pb-free; RoHS-compliant  
MARKING: B5817W: SJ  
B5818W: SK  
B5819W: SL  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Single Diode @TA=25 oC  
Unit  
Parameter  
Symbol  
B5817W  
B5818W  
B5819W  
Non-Repetitive Peak reverse voltage  
V
VRM  
20  
30  
40  
VRRM  
VRWM  
VR  
Peak repetitive Peak reverse voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
20  
14  
30  
21  
40  
28  
V
V
RMS Reverse Voltage  
VR(RMS)  
Average Rectified Output Current  
Peak forward surge current @=8.3ms  
Repetitive Peak Forward Current  
IO  
1
A
A
IFSM  
IFRM  
25  
625  
mA  
Power Dissipation  
Pd  
250  
500  
mW  
K/W  
Thermal  
Ambient  
Resistance  
Junction  
to  
RθJA  
TSTG  
Storage temperature  
-65~+150  
08/04/2007 Rev.1.00  
www.SiliconStandard.com  
1

与B5818W相关器件

型号 品牌 描述 获取价格 数据表
B5818WH Galaxy Microelectronics 1A,30V,Surface Mount Small Signal Schottky Diodes

获取价格

B5818WHE3 MCC Tape : 3K/Reel, 120K/Ctn;

获取价格

B5818WQ YANGJIE SOD-123

获取价格

B5818WS SHUNYE SCHOTTKY BARRIER DIODE

获取价格

B5818WS MDD SCHOTTKY BARRIER DIODE

获取价格

B5818WS MCC 1 Amp Schottky Barrier Rectifier 20 - 40 Volts

获取价格