B220AQ/Q - B260AQ/Q
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
B220AQ/Q
B230AQ/Q B240AQ/Q B250AQ/Q B260AQ/Q
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
20
14
30
21
40
50
35
60
42
V
RMS Reverse Voltage
28
V
A
VR(RMS)
IO
Average Rectified Output Current
2.0
50
Non-Repetitive Peak Forward Surge Current, 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
A
IFSM
Thermal Characteristics
Characteristic
Symbol
Value
Unit
SMA
SMB
25
20
Typical Thermal Resistance, Junction to Lead
°C/W
RθJL
Typical Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
SMB
80
°C/W
°C
RθJA
-65 to +150
TJ, TSTG
Note:
6. Device mounted on FR-4 substrate, 0.4"*0.5", 2oz.
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
B220AQ/Q, B230AQ/Q, B240AQ/Q
B250AQ/Q, B260AQ/Q
Symbol Min
Typ
Max
Unit
Test Condition
0.50
0.70
Forward Voltage Drop
—
—
V
VF
IF = 2.0A, TA = +25°C
@ Rated VR, TA = +25°C
@ Rated VR, TA = +100°C
0.5
20
—
—
Leakage Current (Note 7)
Total Capacitance
mA
pF
IR
—
—
200
CT
VR = 40V, f = 1MHz
Note:
7. Short duration pulse test used to minimize self-heating effect.
2 of 6
www.diodes.com
September 2018
© Diodes Incorporated
B220AQ/Q - B260AQ/Q
Document number: DS38433 Rev. 3 - 2