Datasheet > B1100Q

B1100Q

更新时间： 2023-12-06 20:03:52

品牌	Logo	应用领域
美台 - DIODES		高压
页数	文件大小	规格书
5页	465K
描述
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

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B1100Q 数据手册

B170Q - B1100Q

Maximum Ratings (@T = +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

B170Q

B180Q

B190Q

B1100Q

100

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_R(RMS)

I_O

1.0

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

@ T_T= +125°C

I_FSM

I_RRM

Repetitive Peak Reverse Current

1.0

Thermal Characteristics

Characteristic

Typical Thermal Resistance Junction to Terminal (Note 5)

Operating and Storage Temperature Range

Symbol

R_JT

T_J,T_STG

B170Q

B180Q

B190Q

B1100Q

Unit

C/W

C

-65 to +150

Electrical Characteristics (@T = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

I_F= 1.0A, T_A= +25°C

I_F= 1.0A, T_A= +100°C

@ Rated V_R, T_A= +25C

@ Rated V_R, T_A= +100°C

V_R= 4V, f = 1MHz

—

0.79

0.69

Forward Voltage Drop

V_F

—

0.5

5.0

Leakage Current (Note 6)

Total Capacitance

I_R

—

C_T

Notes:

5. Valid provided that terminals are kept at ambient temperature.

6. Short duration pulse test used to minimize self-heating effect.

2 of 5

www.diodes.com

September 2020

B170Q - B1100Q

Document number: DS38613 Rev. 3 - 2

123 4 5

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