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B1100WG-SL PDF预览

B1100WG-SL

更新时间: 2022-02-26 14:14:08
品牌 Logo 应用领域
竹懋 - CITC /
页数 文件大小 规格书
4页 504K
描述
1A Surface Mount Schottky Barrier Rectifiers

B1100WG-SL 数据手册

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B140WG-SL THRU B1200WG-SL  
1A Surface Mount Schottky Barrier Rectifiers  
Chip Integration Technology Corporation  
Features  
Outline  
SOD-123SL  
Low profile surface mounted application in order to  
optimize board space.  
Low power loss, high efficiency.  
High current capability, low forward voltage drop.  
Ultra high-speed switching.  
0.150(3.80)  
0.134(3.40)  
Silicon epitaxial planar chip, metal silicon junction.  
Lead free in compliance with EU RoHS.  
0.051(1.3)  
0.032(0.8)  
0.079(2.0)  
0.059(1.5)  
Marking code  
0.008(0.20)  
0.004(0.10)  
Mechanical data  
0.043(1.10)  
0.033(0.85)  
Epoxy:UL94-V0 rated flame retardant  
Case : Molded plastic, SOD-123SL  
Terminals : Solder plated, solderable per  
MIL-STD-750, Method 2026  
0.037(0.95)  
0.022(0.55)  
Polarity : Indicated by cathode band  
Weight : Approximated 0.018 gram  
Dimensions in inches and (millimeters)  
Maximum ratings and electrical characteristics  
Rating at 25OC ambient temperature unless otherwise specified.  
Parameter  
Conditions  
Symbol  
IO  
MIN.  
TYP.  
MAX.  
1.0  
UNIT  
A
Forward Rectified Output Current  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC method)  
Forward Surge Current  
IFSM  
25  
A
40V,60V  
0.1  
0.05  
10  
Peak Reverse Current @ 25oC  
IR  
100V,150V,200V  
40V,60V  
mA  
OC  
At Rated DC Blocking Voltage @ 100oC  
Storage temperature Range  
IR  
100V,150V,200V  
5
TSTG  
-50  
+150  
Max.  
Max. forward voltage  
@1A, TA = 25OC  
VF (V)  
Max.  
RMS voltage  
VRMS (V)  
Max. DC  
blocking voltage  
VR (V)  
repetitive peak  
Operating temperature  
TJ (OC)  
Symbol  
reverse voltage  
VRRM (V)  
B140WG-SL  
B160WG-SL  
B1100WG-SL  
B1150WG-SL  
B1200WG-SL  
40  
60  
28  
42  
40  
60  
0.55  
0.70  
0.85  
-50 ~ +150  
100  
150  
200  
70  
100  
150  
200  
105  
140  
0.92  
Document ID : DS-22K020  
Revised Date : 2016/12  
Revision : C1  
1

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