Datasheet > B1100WG-SL

B1100WG-SL

更新时间： 2024-11-20 01:23:55

品牌	Logo	应用领域
竹懋 - CITC		/
页数	文件大小	规格书
4页	504K
描述
1A Surface Mount Schottky Barrier Rectifiers

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中文翻译

获取价格

数据手册

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B1100WG-SL 数据手册

B140WG-SL THRU B1200WG-SL

1A Surface Mount Schottky Barrier Rectifiers

Chip Integration Technology Corporation

■ Features

■ Outline

SOD-123SL

• Low profile surface mounted application in order to

optimize board space.

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

• Ultra high-speed switching.

0.150(3.80)

0.134(3.40)

• Silicon epitaxial planar chip, metal silicon junction.

• Lead free in compliance with EU RoHS.

0.051(1.3)

0.032(0.8)

0.079(2.0)

0.059(1.5)

Marking code

0.008(0.20)

0.004(0.10)

■ Mechanical data

0.043(1.10)

0.033(0.85)

• Epoxy:UL94-V0 rated flame retardant

• Case : Molded plastic, SOD-123SL

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

0.037(0.95)

0.022(0.55)

• Polarity : Indicated by cathode band

• Weight : Approximated 0.018 gram

Dimensions in inches and (millimeters)

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified.

Parameter

Conditions

Symbol

I_O

MIN.

TYP.

MAX.

1.0

UNIT

Forward Rectified Output Current

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward Surge Current

I_FSM

40V,60V

0.1

0.05

Peak Reverse Current @ 25^oC

I_R

100V,150V,200V

40V,60V

^OC

At Rated DC Blocking Voltage @ 100^oC

Storage temperature Range

I_R

100V,150V,200V

T_STG

-50

+150

Max.

Max. forward voltage

@1A, T_A= 25^OC

V_F(V)

Max.

RMS voltage

V_RMS(V)

Max. DC

blocking voltage

V_R(V)

repetitive peak

Operating temperature

T_J(^OC)

Symbol

reverse voltage

V_RRM(V)

B140WG-SL

B160WG-SL

B1100WG-SL

B1150WG-SL

B1200WG-SL

0.55

0.70

0.85

-50 ~ +150

100

150

200

100

150

200

105

140

0.92

Document ID : DS-22K020

Revised Date : 2016/12

Revision : C1

12 3 4

中文翻译

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