Datasheet > B10S

B10S

更新时间： 2024-09-20 22:27:07

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
2页	73K
描述
SMD Genenal Purpose Bridge Rectifier

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中文翻译

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数据手册

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B10S 数据手册

SMD Genenal Purpose Bridge Rectifier

CCOOMMCCHHIIPP

www.comchip.com.tw

B05S Thru B10S

Glass Passivated Type

Reverse Voltage: 50 - 1000 Volts

Forward Current: 0.5 Amp

Features

TO-269AA

Ideal for surface mount applications

Easy pick and place

Plastic package has Underwriters Lab.

flammability classification 94V-0

Built-in strain relief

Glas passivated junction

Mechanical data

Case: JEDEC DO-269AA molded plastic

Terminals: solderable per MIL-STD-750,

method 2026

Polarity: Marked on body

Mounting position: Any

Approx. Weight:0.22 gram

Dimension in inches and (millimeters)

Maximum Ratings and Electrical Characterics

Unit

B05S

B1S

100

B2S

200

140

B4S

400

280

B6S

600

420

B8S

800

560

B10S

1000

700

Symbol

VRRM

VDC

Parameter

Max. Repetitive PeakReverse Voltage

Max. DC BlockingVoltage

Max. RMS Voltage

VRMS

Peak Surge ForwardCurrent

8.3ms single halfsine-wave

superimposed on rateload

( JEDEC method)

IFSM

I o

V F

I R

0.5

Max. Average Forward Current

Max. Instantaneous ForwardCurrent

at 0.5 A

1.0

Max. DC ReverseCurrent at RatedDC

Ta=25

Blocking Voltage

Ta=125

500

Max. Thermal Resistance(Note 1)

Operating Junction Temperature

Storage Temperature

C/W

T j

- 5 5 t o + 1 5 0

TSTG

- 5 5 t o + 1 5 0

Note 1: Thermalresistance from junctionto ambient.

Page 1

MDS0212005A

中文翻译

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