Datasheet > B06N60

B06N60

更新时间： 2024-02-29 14:54:17

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描述
N-Channel Power MOSFET

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B06N60 数据手册

B06N60

N-Channel Power MOSFET

•

Advanced Process Technology

Ultra low On-Resistance Provides Higher Efficiency

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

• IDSS and VDS (on) Specified at Elevated Temperature

DESCRIPTION

This high voltage MOSFET used an advanced termination scheme to provide enhanced voltage-blocking capability without

degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and

commutation time. Designed for high voltage, high speed switching application in power supplies, converters and PWM motor

controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operation areas

critical and offer additional and safety margin against unexpected voltage transients.

TO-220

VDSS = 600V

RDS (on) = 1.2 Ω

ID = 6.0 A

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain to Current – Continuous

6.0

Gate-to-Source Voltage – Continue

VGS

VGSM

+/- 20

+/- 40

125

- Non-repetitive

Total Power Dissipation

Derate Above 25℃

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy – TJ = 25 ℃

(VDD = 100V, VGS= 10V, IL =6A, L = 10mH, RG=25Ω)

Thermal Resistance – Junction to Case

1.0

-55 to 150

180

W/℃

℃

TJ, TSTG

EAS

ΘJC

ΘJA

1.0

62.5

℃/W

Junction to Ambient

℃

Maximum Led Temperature for Solding Purpose, 1/8” from case for 10 seconds

260

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