Datasheet > AV2907

AV2907

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
AVICTEK		晶体放大器晶体管
页数	文件大小	规格书
4页	207K
描述
Amplifier Transistor PNP Silicon

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数据手册

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AV2907 数据手册

@vic

AV2907

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

CEO

CBO

EBO

–40

–60

Vdc

–5.0

–600

Vdc

TO–92

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

(I = –10 mAdc, I = 0)

–40

–60

–5.0

—

Vdc

(BR)CEO

Collector–Base Breakdown Voltage

(I = –10 Adc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = –10 Adc, I = 0)

—

Vdc

(BR)EBO

Collector Cutoff Current

(V = –30 Vdc, V

–50

nAdc

µAdc

CEX

= –0.5 Vdc)

CE EB(off)

Collector Cutoff Current

CBO

= –50 Vdc, I = 0)

—

–0.01

–10

= –50 Vdc, I = 0, T = 150°C)

Emitter Cutoff Current

(V = –3.0 Vdc)

—

–10

–50

nAdc

EBO

Collector Cutoff Current

(V = –10 V)

CEO

Base Cutoff Current

(V = –30 Vdc, V

BEX

= –0.5 Vdc)

CE EB(off)

1. Pulse Test: Pulse Width 300 s, Duty Cycle

2.0%.

Website: http://www.avictek.com

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