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AT49BV163D PDF预览

AT49BV163D

更新时间： 2024-02-07 19:53:39
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
27页 497K
描述
16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory

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中文翻译

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AT49BV163D 数据手册

 浏览型号AT49BV163D的Datasheet PDF文件第2页浏览型号AT49BV163D的Datasheet PDF文件第3页浏览型号AT49BV163D的Datasheet PDF文件第4页浏览型号AT49BV163D的Datasheet PDF文件第5页浏览型号AT49BV163D的Datasheet PDF文件第6页浏览型号AT49BV163D的Datasheet PDF文件第7页 
Features  
• Single Voltage Read/Write Operation: 2.65V to 3.6V  
• Fast Read Access Time – 70 ns  
• Sector Erase Architecture  
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout  
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout  
• Fast Word Program Time – 10 µs  
• Fast Sector Erase Time – 100 ms  
• Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming from Any Sector by Suspending Erase  
of a Different Sector  
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending  
Programming of Any Other Byte/Word  
• Low-power Operation  
16-megabit  
(1M x 16/2M x 8)  
3-volt Only  
– 10 mA Active  
Flash Memory  
– 15 µA Standby  
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection  
• RESET Input for Device Initialization  
• Sector Lockdown Support  
• TSOP and CBGA Package Options  
• Top or Bottom Boot Block Configuration Available  
• 128-bit Protection Register  
AT49BV163D  
AT49BV163DT  
• Minimum 100,000 Erase Cycles  
• Common Flash Interface (CFI)  
• Green (Pb/Halide-free) Packaging  
1. Description  
The AT49BV163D(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576  
words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0  
- I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 39 sectors for  
erase operations. The device is offered in a 48-lead TSOP and a 48-ball CBGA pack-  
age. The device has CE and OE control signals to avoid any bus contention. This  
device can be read or reprogrammed using a single power supply, making it ideally  
suited for in-system programming.  
The device powers on in the read mode. Command sequences are used to place the  
device in other operation modes such as program and erase. The device has the  
capability to protect the data in any sector (see “Sector Lockdown” on page 5).  
To increase the flexibility of the device, it contains an Erase Suspend and Program  
Suspend feature. This feature will put the erase or program on hold for any amount of  
time and let the user read data from or program data to any of the remaining sectors  
within the memory. The end of a program or an erase cycle is detected by the  
READY/BUSY pin, Data Polling or by the toggle bit.  
A six-byte command (Enter Single Pulse Program Mode) sequence to remove  
the requirement of entering the three-byte program sequence is offered to further  
improve programming time. After entering the six-byte code, only single pulses on the  
write control lines are required for writing into the device. This mode (Single  
Pulse Byte/Word Program) is exited by powering down the device, or by pulsing  
the RESET pin low for a minimum of 500 ns and then bringing it back to VCC. Erase,  
3590A–FLASH–12/05  
1234567...27

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 		16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
AT49BV163DT-70CU ATMEL

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AT49BV163DT-70TU ATMEL

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AT49BV2048 ETC

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 		Flash, 128KX16, 150ns, PDSO44, 0.525 INCH, PLASTIC, SOIC-44
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 		Flash, 128KX16, 150ns, PDSO44, 0.525 INCH, PLASTIC, SOIC-44
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 		Flash, 128KX16, 150ns, PDSO44, 0.525 INCH, PLASTIC, SOIC-44

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