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AT45DQ161 PDF预览

AT45DQ161

更新时间: 2023-12-20 18:44:45
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
77页 2348K
描述
16Mbit, 2.3V to 3.6V Range SPI Serial Flash Memory Includes Dual IO and Quad IO support

AT45DQ161 数据手册

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Datasheet  
AT45DQ161  
16-Mbit DataFlash, 2.3 V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-I/O Support  
Features  
• Single 2.3 V - 3.6 V supply  
• Serial Peripheral Interface (SPI) compatible  
• Supports SPI modes 0 and 3  
• Supports RapidSoperation  
• Supports Dual-input and Quad-input Buffer Write  
Dual-input and Quad-input Buffer Write  
• Supports Dual-output and Quad-output Read  
• High operating frequencies  
• 85 MHz (for SPI)  
• 85 MHz (for Dual-I/O and Quad-I/O)  
• Clock-to-output time (tV) of 6 ns maximum  
• User configurable page size  
• 512 bytes per page  
• 528 bytes per page (default)  
• Device can be ordered pre-configured to any of the two page size options  
• Two fully independent SRAM data buffers (512/528 bytes)  
• Allows receiving data while reprogramming the main memory array  
• Flexible programming options  
• Byte/Page Program (1 to 512/528 bytes) directly into main memory  
• Buffer Write  
• Buffer to Main Memory Page Program  
• Flexible erase options  
• Page Erase (512/528 bytes), Block Erase (4 kB)  
• Sector Erase (128 kB), Chip Erase (16-Mbits)  
• Program and Erase Suspend/Resume  
• Advanced hardware and software data protection features  
• Individual sector protection  
• Individual sector lockdown to make any sector permanently read-only  
• 128-byte, One-Time Programmable (OTP) Security Register  
• 64 bytes factory programmed with a unique identifier  
• 64 bytes user programmable  
• Hardware and software controlled reset options  
• JEDEC Standard Manufacturer and Device ID Read  
• Low-power dissipation  
• 500 nA Ultra-Deep Power-Down current (typical)  
• 3 µA Deep Power-Down current (typical)  
• 25 µA Standby current (typical)  
• 11 mA Active Read current (typical at 20 MHz)  
• Endurance: 100,000 program/erase cycles per page minimum (50,000 cycles for extended  
temperature option)  
• Data retention: 20 years  
• Complies with full industrial temperature range (extended temperature optional)  
• Green (Pb/Halide-free/RoHS compliant) packaging options  
• 8-lead 150-mil narrow SOIC  
• 8-lead 208-mil wide SOIC  
• 8-pad Ultra-thin DFN (5 x 6 x 0.6 mm)  
DS-AT45DQ161-8790 Rev. H  
2023-07-31  
Page 1  
© 2023 Renesas Electronics  

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