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AT45DB161D_13 PDF预览

AT45DB161D_13

更新时间: 2022-10-12 13:38:47
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
51页 2128K
描述
16-megabit 2.5V or 2.7V DataFlash

AT45DB161D_13 数据手册

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Features  
Single 2.5V - 3.6V or 2.7V - 3.6V Supply  
Atmel RapidS Serial Interface: 66MHz Maximum Clock Frequency  
– SPI Compatible Modes 0 and 3  
User Configurable Page Size  
– 512-Bytes per Page  
– 528-Bytes per Page  
– Page Size Can Be Factory Pre-configured for 512-Bytes  
Page Program Operation  
– Intelligent Programming Operation  
– 4,096 Pages (512-/528-Bytes/Page) Main Memory  
Flexible Erase Options  
16-megabit  
2.5V or 2.7V  
DataFlash  
– Page Erase (512-Bytes)  
– Block Erase (4-Kbytes)  
– Sector Erase (128-Kbytes)  
– Chip Erase (16-Mbits)  
Atmel AT45DB161D  
Two SRAM Data Buffers (512-/528-Bytes)  
– Allows Receiving of Data while Reprogramming the Flash Array  
Continuous Read Capability through Entire Array  
– Ideal for Code Shadowing Applications  
Low-power Dissipation  
– 7mA Active Read Current Typical  
– 25µA Standby Current Typical  
– 15µA Deep Power Down Typical  
Hardware and Software Data Protection Features  
– Individual Sector  
Sector Lockdown for Secure Code and Data Storage  
– Individual Sector  
Security: 128-byte Security Register  
– 64-byte User Programmable Space  
– Unique 64-byte Device Identifier  
JEDEC Standard Manufacturer and Device ID Read  
100,000 Program/Erase Cycles Per Page Minimum  
Data Retention – 20 Years  
Industrial Temperature Range  
Green (Pb/Halide-free/RoHS Compliant) Packaging Options  
1.  
Description  
The Atmel® AT45DB161D is a 2.5V or 2.7V, serial-interface sequential access Flash  
memory ideally suited for a wide variety of digital voice-, image-, program code- and  
data-storage applications. The AT45DB161D supports Atmel RapidSserial interface  
for applications requiring very high speed operations. RapidS serial interface is SPI  
compatible for frequencies up to 66MHz. Its 17,301,504-bits of memory are organized  
as 4,096 pages of 512-bytes or 528-bytes each. In addition to the main memory, the  
AT45DB161D also contains two SRAM buffers of 512-/528-bytes each. The buffers  
allow the receiving of data while a page in the main Memory is being reprogrammed,  
as well as writing a continuous data stream. EEPROM emulation (bit or byte alterabil-  
ity) is easily handled with a self-contained three step read-modify-write  
3500N–DFLASH–05/10  

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