Datasheet > AT28C010E-25DM/883

AT28C010E-25DM/883

更新时间： 2024-09-29 22:18:03

品牌	Logo	应用领域
爱特美尔 - ATMEL		可编程只读存储器
页数	文件大小	规格书
11页	660K
描述
1 Megabit 128K x 8 Paged CMOS E2PROM

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中文翻译

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数据手册

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AT28C010E-25DM/883 数据手册

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AT28C010 Mil

Features

Fast Read Access Time - 120 ns

Automatic Page Write Operation

•

Internal Address and Data Latches for 128-Bytes

Internal Control Timer

Fast Write Cycle Time

•

Page Write Cycle Time - 10 ms Maximum

1 to 128-Byte Page Write Operation

Low Power Dissipation

•

80 mA Active Current

1 Megabit

(128K x 8)

Paged

300 µA CMOS Standby Current

Hardware and Software Data Protection

DATA Polling for End of Write Detection

•

High Reliability CMOS Technology

Endurance: 10⁴or 10⁵Cycles

Data Retention: 10 Years

Single 5V ± 10% Supply

CMOS and TTL Compatible Inputs and Outputs

JEDEC Approved Byte-Wide Pinout

•

CMOS

•

E²PROM

•

Description

The AT28C010 is a high-performance Electrically Erasable and Programmable Read

Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

(continued)

Military

Pin Configurations

44 LCC

Pin Name

A0 - A16

Function

Top View

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

AT28C010 Mil

I/O0 - I/O7

CERDIP, FLATPACK

Top View

PGA

Top View

32 LCC

Top View

0353C

2-243

12 3 4 5 6 7...11

中文翻译

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