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AT28C010-12DK-MQ PDF预览

AT28C010-12DK-MQ

更新时间: 2024-01-22 15:26:48
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路异步传输模式ATM可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
17页 230K
描述
Space 1-megabit (128K x 8) Paged Parallel EEPROMs

AT28C010-12DK-MQ 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSOP1,Reach Compliance Code:compliant
Factory Lead Time:13 weeks风险等级:1.63
最长访问时间:120 nsJESD-30 代码:R-PDSO-G32
长度:18.4 mm内存密度:1048576 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
编程电压:5 V座面最大高度:1.2 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

AT28C010-12DK-MQ 数据手册

 浏览型号AT28C010-12DK-MQ的Datasheet PDF文件第2页浏览型号AT28C010-12DK-MQ的Datasheet PDF文件第3页浏览型号AT28C010-12DK-MQ的Datasheet PDF文件第4页浏览型号AT28C010-12DK-MQ的Datasheet PDF文件第6页浏览型号AT28C010-12DK-MQ的Datasheet PDF文件第7页浏览型号AT28C010-12DK-MQ的Datasheet PDF文件第8页 
AT28C010-12DK  
Electrical Characteristics  
Absolute Maximum Ratings*  
*NOTICE:  
Stresses beyond those listed under Absolute  
Temperature Under Bias................................ -55°C to +125°C  
Maximum Ratingsmay cause permanent dam-  
age to the device. This is a stress rating only and  
functional operation of the device at these or any  
other conditions beyond those indicated in the  
operational sections of this specification is not  
implied. Exposure to absolute maximum rating  
conditions for extended periods may affect  
device reliability.  
Storage Temperature..................................... -65°C to +150°C  
All Input Voltages  
(including NC Pins)  
with Respect to Ground...................................-0.6V to +6.25V  
All Output Voltages  
with Respect to Ground.............................-0.6V to VCC + 0.6V  
Voltage on OE and A9  
with Respect to Ground...................................-0.6V to +13.5V  
DC Characteristics  
Symbol  
ILI  
Parameter  
Condition  
Min  
Max  
10  
Units  
µA  
µA  
µA  
mA  
mA  
V
Input Load Current  
Output Leakage Current  
VIN = 0V to VCC + 1V  
VI/O = 0V to VCC  
ILO  
10  
ISB1  
ISB2  
ICC  
VCC Standby Current CMOS CE = VCC - 0.3V to VCC + 1V  
300  
3
VCC Standby Current TTL  
VCC Active Current  
CE = 2.0V to VCC + 1V  
f = 5 MHz; IOUT = 0 mA  
80  
VIL  
Input Low Voltage  
0.8  
VIH  
Input High Voltage  
2.0  
V
VOL  
VOH1  
VOH2  
Output Low Voltage  
Output High Voltage  
Output High Voltage CMOS  
IOL = 2.1 mA  
0.45  
V
IOH = -400 µA  
2.4  
4,2  
V
IOH = -100 µA; VCC = 4.5V  
V
5
4259AAERO06/03  

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