Datasheet > 存储 > EPROM> AT27C080-10PI

AT27C080-10PI

更新时间： 2024-02-24 06:34:23

品牌	Logo	应用领域
爱特美尔 - ATMEL		存储内存集成电路光电二极管可编程只读存储器 OTP只读存储器电动程控只读存储器
页数	文件大小	规格书
10页	170K
描述
8-Megabit 1M x 8 UV Erasable CMOS EPROM

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技术参数
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AT27C080-10PI 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TSOP1	包装说明：	TSOP1, TSSOP32,.8,20
针数：	32	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.71
风险等级：	5.83	Is Samacsys：	N
最长访问时间：	100 ns	I/O 类型：	COMMON
JESD-30 代码：	R-PDSO-G32	JESD-609代码：	e0
长度：	18.4 mm	内存密度：	8388608 bit
内存集成电路类型：	OTP ROM	内存宽度：	8
湿度敏感等级：	3	功能数量：	1
端子数量：	32	字数：	1048576 words
字数代码：	1000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	1MX8	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP1
封装等效代码：	TSSOP32,.8,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	240	电源：	5 V
认证状态：	Not Qualified	座面最大高度：	1.2 mm
最大待机电流：	0.0001 A	子类别：	OTP ROMs
最大压摆率：	0.04 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	8 mm	Base Number Matches：	1

AT27C080-10PI 数据手册

The AT27C080 is available in a choice of packages, includ-

ing; one-time programmable (OTP) plastic PLCC, PDIP,

SOIC (SOP), and TSOP, as well as windowed ceramic

Cerdip. All devices feature two-line control (CE, OE) to give

designers the flexibility to prevent bus contention.

System Considerations

Switching between active and standby conditions via the

Chip Enable pin may produce transient voltage excursions.

Unless accommodated by the system design, these tran-

sients may exceed data sheet limits, resulting in device

non-conformance. At a minimum, a 0.1 µF high frequency,

low inherent inductance, ceramic capacitor should be uti-

lized for each device. This capacitor should be connected

between the V_CCand Ground terminals of the device, as

close to the device as possible. Additionally, to stabilize the

supply voltage level on printed circuit boards with large

EPROM arrays, a 4.7 µF bulk electrolytic capacitor should

be utilized, again connected between the V_CCand Ground

terminals. This capacitor should be positioned as close as

possible to the point where the power supply is connected

to the array.

With high density 1M byte storage capability, the

AT27C080 allows firmware to be stored reliably and to be

accessed by the system without the delays of mass storage

media.

Atmel’s 27C080 has additional features to ensure high

quality and efficient production use. The Rapid^™Program-

ming Algorithm reduces the time required to program the

part and guarantees reliable programming. Programming

time is typically only 50 µs/byte. The Integrated Product

Identification Code electronically identifies the device and

manufacturer. This feature is used by industry standard

programming equipment to select the proper programming

algorithms and voltages.

Erasure Characteristics

The entire memory array of the AT27C080 is erased (all

outputs read as V_OH) after exposure to ultraviolet light at a

wavelength of 2,537Å. Complete erasure is assured after a

minimum of 20 minutes of exposure using 12,000 µW/cm²

intensity lamps spaced one inch away from the chip. Mini-

mum erase time for lamps at other intensity ratings can be

calculated from the minimum integrated erasure dose of 15

W.sec/cm². To prevent unintentional erasure, an opaque

label is recommended to cover the clear window on any UV

erasable EPROM that will be subjected to continuous

flourescent indoor lighting or sunlight.

AT27C080

123 4 5 6 7...10

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与AT27C080-10PI相关器件

型号	品牌	描述	获取价格	数据表
AT27C080-10RC	ATMEL	8-Megabit 1M x 8 UV Erasable CMOS EPROM	获取价格
AT27C080-10RCT/R	ATMEL	OTP ROM, 1MX8, 100ns, CMOS, PDSO32, 0.450 INCH, PLASTIC, SOIC-32	获取价格
AT27C080-10RI	ATMEL	8-Megabit 1M x 8 UV Erasable CMOS EPROM	获取价格
AT27C080-10TC	ATMEL	8-Megabit 1M x 8 UV Erasable CMOS EPROM	获取价格
AT27C080-10TCT/R	ATMEL	OTP ROM, 1MX8, 100ns, CMOS, PDSO32, PLASTIC, TSOP-32	获取价格
AT27C080-10TI	ATMEL	8-Megabit 1M x 8 UV Erasable CMOS EPROM	获取价格

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