5秒后页面跳转
AT27BV512-70TC PDF预览

AT27BV512-70TC

更新时间: 2024-01-07 13:28:35
品牌 Logo 应用领域
其他 - ETC 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
12页 160K
描述
x8 EPROM

AT27BV512-70TC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP1
包装说明:8 X 13.40 MM, GREEN, PLASTIC, MO-183, TSOP1-28针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.69
最长访问时间:70 ns其他特性:ALSO OPERATES AT 5V SUPPLY
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e3长度:11.8 mm
内存密度:524288 bit内存集成电路类型:OTP ROM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:28
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP28,.53,22
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3/5 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.00002 A
子类别:OTP ROMs最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.55 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:8 mm
Base Number Matches:1

AT27BV512-70TC 数据手册

 浏览型号AT27BV512-70TC的Datasheet PDF文件第2页浏览型号AT27BV512-70TC的Datasheet PDF文件第3页浏览型号AT27BV512-70TC的Datasheet PDF文件第4页浏览型号AT27BV512-70TC的Datasheet PDF文件第6页浏览型号AT27BV512-70TC的Datasheet PDF文件第7页浏览型号AT27BV512-70TC的Datasheet PDF文件第8页 
AT27BV512  
AC Characteristics for Read Operation  
VCC = 2.7V to 3.6V and 4.5V to 5.5V  
AT27BV512  
-90 -12  
-70  
-15  
Symbol  
Parameter  
Condition  
Min  
Max  
70  
Min  
Max  
90  
Min  
Max  
120  
120  
50  
Min  
Max  
150  
150  
60  
Units  
ns  
(3)  
tACC  
Address to Output Delay  
CE to Output Delay  
OE/VPP to Output Delay  
CE = OE/VPP = VIL  
OE/VPP = VIL  
CE = VIL  
(2)  
tCE  
70  
90  
ns  
(2)(3)  
tOE  
50  
50  
ns  
OE/VPP or CE High to  
Output Float, whichever  
occurred first  
(4)(5)  
tDF  
40  
40  
40  
50  
ns  
ns  
Output Hold from  
Address, CE or OE/VPP,  
whichever occurred first  
tOH  
0
0
0
0
AC Waveforms for Read Operation(1)  
Notes: 1. Timing measurement references are 0.8V and 2.0V. Input AC drive levels are 0.45V and 2.4V, unless otherwise specified.  
2. OE/VPP may be delayed up to tCE-tOE after the falling edge of CE without impact on tCE  
3. OE/VPP may be delayed up to tACC-tOE after the address is valid without impact on tACC  
.
.
4. This parameter is only sampled and is not 100% tested.  
5. Output float is defined as the point when data is no longer driven.  
6. When reading a 27BV256, a 0.1 µF capacitor is required across VCC and ground to suppress spurious voltage transients.  
5

与AT27BV512-70TC相关器件

型号 品牌 描述 获取价格 数据表
AT27BV512-70TI ATMEL 512K (64K x 8) Unregulated Battery-Voltage High-Speed OTP EPROM

获取价格

AT27BV512-70TU ATMEL 512K (64K x 8) Unregulated Battery-Voltage High-Speed OTP EPROM

获取价格

AT27BV512-90JC ATMEL 512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM

获取价格

AT27BV512-90JI ATMEL 512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM

获取价格

AT27BV512-90JIT/R ATMEL OTP ROM, 64KX8, 90ns, CMOS, PQCC32, PLASTIC, LCC-32

获取价格

AT27BV512-90RC ATMEL 512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM

获取价格