Datasheet > AT27BV020_07

AT27BV020_07

更新时间： 2022-12-27 23:22:31

品牌	Logo	应用领域
爱特美尔 - ATMEL		电池可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	367K
描述
2-megabit (256K x 8) Unregulated Battery-Voltage High-speed OTP EPROM

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AT27BV020_07 数据手册

AT27BV020

16. AC Programming Characteristics

T_A= 25 5°C, V_CC= 6.5 0.25V, V_PP= 13.0 0.25V

Limits

Symbol

t_AS

Parameter

Test Conditions⁽¹⁾

Min

Max

Units

µs

Address Setup Time

CE Setup Time

t_CES

t_OES

t_DS

µs

OE Setup Time

Input Rise and Fall Times:

µs

(10% to 90%) 20 ns

Data Setup Time

µs

t_AH

Address Hold Time

µs

Input Pulse Levels:

t_DH

Data Hold Time

µs

0.45V to 2.4V

t_DFP

t_VPS

t_VCS

t_PW

OE High to Output Float Delay⁽³⁾

V_PPSetup Time

130

Input Timing Reference Level:

0.8V to 2.0V

µs

V_CCSetup Time

µs

PGM Program Pulse Width⁽²⁾

105

150

µs

Output Timing Reference Level:

0.8V to 2.0V

t_OE

Data Valid from OE

V_PPPulse Rise Time During

Programming

t_PRT

Notes: 1. V_CCmust be applied simultaneously or before V_PPand removed simultaneously or after V_PP.

2. This parameter is only sampled and is not 100% tested. Output Float is defined as the point where data is no longer driven –

see timing diagram.

3. Program Pulse width tolerance is 100 µsec 5%.

17. Atmel’s AT27BV020 Integrated Product Identification Code⁽¹⁾

Pins

Hex

Codes

Data

Manufacturer

Device Type

Note:

1. The AT27BV020 has the same Product Identification Code as the AT27C020. Both are programming compatible.

0902F–EPROM–12/07

1...6 7 8910 11 12...15

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