Datasheet > ASSR-3211

ASSR-3211

更新时间： 2022-07-16 08:17:31

品牌	Logo	应用领域
安华高科 - AVAGO		继电器固态继电器
页数	文件大小	规格书
14页	161K
描述
General Purpose, Form A, Solid State Relay (Photo MOSFET)

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ASSR-3211 数据手册

Package Characteristics

Unless otherwise speciﬁed, T = 25°C.

Parameter

Sym.

Min.

Typ.

Max.

Units

Conditions

Fig.

Note

Input-Output Momentary

Withstand Voltage

V_ISO

3750

Vrms

RH  50%,

t = 1 min

4, 5

Input-Output Resistance

Input-Output Capacitance

ASSR-3210

R_I-O

10¹²



V_I-O= 500 Vdc

C_I-O

0.4

0.5

0.8

f = 1 MHz;

_I-O= 0 Vdc

ASSR-3211

ASSR-3220

Electrical Speciﬁcations (DC)

Over recommended operating T = -40°C to 85°C, I = 5mA to 10mA, unless otherwise speciﬁed.

Parameter

Sym.

Min.

Typ.

Max.

Units

Conditions

Fig.

Note

Output Withstand

Voltage

|V_O(OFF)

250

280

V_F=0.8V, I_O=250 A,

T_A=25C

230

V_F=0.8V, I_O=250 A

Output Leakage

Current

I_O(OFF)

0.3

100

V_F=0.8V, V_O=250V,

T_A=25C

A

V

V_F=0.8V, V_O=250V

Output Oﬀset

Voltage

|V_(OS)

V_R

I_F=5mA, I_O=0mA

Input Reverse

Breakdown Voltage

I_R=10 A

Input Forward

Voltage

V_F

1.1

1.3

1.65

I_F=5mA

5, 6

7, 8

Output

On-resistance

R_(ON)



I_F=5mA, I_O=200mA,

Pulse 30ms, T_A=25C

ASSR-3211

Connection B

R_(ON)

2.0

2.5

I_F=5mA, I_O=400mA,

Pulse 30ms, T_A=25C

1...6 7 8910 11 12...14

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