Datasheet > ASCM30N120XD

ASCM30N120XD

更新时间： 2024-09-26 17:15:43

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
7页	3971K
描述
TO-247-4

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中文翻译

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数据手册

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ASCM30N120XD 数据手册

ASCM30N120XD

1200V SIC N-Channel MOSFET

Features

High Speed Switching with Low Capacitances

High Blocking Voltage with Low RDS(on)

Product Summary

Optimized package with separate driver source

Easy to parallel and simple to drive

1200

mΩ

DS(on),Max@ VGS=20V

100

Applications

EV motor drive

Converters

High Voltage DC/DC

Switch Mode Power Supplies

Power Factor Correction Modules

Absolute Maximum Ratings(Tc=25℃)

Symbol Parameter

Value

1200

Unit

V_DS

I_D

Drain-Source Voltage

Drain Current(continuous)at Tc=25℃

Drain Current(continuous)at Tc=100℃

Drain Current (pulsed)

I_D

I_DM

V_GS

P_D

Gate-Source Voltage

-10/+22

145

Power Dissipation T_C= 25°C

Junction and Storage Temperature Range

℃

T_J,Tstg

-55 to +150

Thermal Characteristics

Symbol

Parameter

Value.

0.86

Unit

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RJC

C/W

RJA

The values are based on the junction-to case thermal impedance which is measured with the device

mounted to a large heat sink assuming maximum junction temperature of Tj(max)=150℃

www.ascendsemi.com

0755-86970486

Sep 2022 Version1.0

1/7

12 3 4 5 6 7

中文翻译

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