Datasheet > AS8E128K32_05

AS8E128K32_05

更新时间： 2022-12-27 17:57:45

品牌	Logo	应用领域
AUSTIN		存储可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
13页	283K
描述
128K x 32 EEPROM EEPROM Memory Array

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AS8E128K32_05 数据手册

EEPROM

AS8E128K32

Austin Semiconductor, Inc.

CAPACITANCE TABLE (V_IN= 0V, f = 1 MHz, T_A= 25^oC)

SYMBOL

C_ADD

PARAMETER

A0 - A16 Capacitance

MAX

UNITS

C_OE

OE\ Capacitance

C_WE,C_CE

C_IO

WE\ and CE\ Capacitance

I/O 0- I/O 31 Capacitance

NOTE: 1. This parameter is guaranteed but not tested.

TRUTH TABLE

MODE

I/O

V_IL

V_IH

D_OUT

D_IN

Read

V_IL

V_IH

X (1)

V_IL

Write (2)

Standby/Write

Write Inhibit

Output Disable

High Z

V_IH

V_IL

V_IH

High Z

NOTES: 1. X can be V_ILor V_IH

2. Refer toAC Programming Waveforms

AC TEST CONDITIONS

Current Source

TEST SPECIFICATIONS

Device

Under

Test

Vz = 1.5V

(Bipolar

Supply)

Input pulse levels...........................................V_SSto 3V

Input rise and fall times...........................................5ns

Input timing reference levels.................................1.5V

Output reference levels.........................................1.5V

Output load................................................See Figure 1

Ceff = 50pf

Current Source

Figure 1

NOTES:

Vz is programmable from -2V to + 7V.

I_OLand I_OHprogrammable from 0 to 16 mA.

Vz is typically the midpoint of V_OHand V_OL.

I_OLand I_OHare adjusted to simulate a typical resistive load

circuit.

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS8E128K32

Rev. 7.6 06/05

1 2 345 6 7...13

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