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AS7C31024-15HI PDF预览

AS7C31024-15HI

更新时间: 2022-12-01 20:41:35
品牌 Logo 应用领域
ALSC 静态存储器光电二极管
页数 文件大小 规格书
9页 209K
描述
Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32

AS7C31024-15HI 数据手册

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AS7C1024  
AS7C31024  
®
Data retention characteristics (over the operating range)13  
Parameter  
Symbol  
Test conditions  
Device  
Min  
2.0  
Max  
Unit  
V
V
for data retention  
VDR  
5
1
1
CC  
V
= 2.0V  
AS7C1024  
mA  
mA  
ns  
CC  
Data retention current  
ICCDR  
CE1 V –0.2V or  
CC  
AS7C31024  
CE2 0.2V  
Chip deselect to data retention time  
Operation recovery time  
tCDR  
tR  
0
V
V –0.2V or  
IN  
CC  
V
0.2V  
t
ns  
IN  
RC  
Input leakage current  
| ILI |  
µA  
Data retention waveform  
Data retention mode  
VDR 2.0V  
VCC  
VCC  
VCC  
tCDR  
tR  
VDR  
VIH  
VIH  
CE1  
AC test conditions  
– 5V output load: see Figure B or Figure C.  
Thevenin equivalent:  
168W  
– Input pulse level: GND to 3.0V. See Figure A.  
– Input rise and fall times: 2 ns. See Figure A.  
– Input and output timing reference levels: 1.5V.  
DOUT  
+1.728V (5V and 3.3V)  
+5V  
+3.3V  
480W  
320W  
DOUT  
DOUT  
255W  
+3.0V  
90%  
10%  
90%  
10%  
255W  
C(14)  
GND  
C(14)  
GND  
2 ns  
Figure A: Input pulse  
GND  
Figure B: 5V Output load  
Figure C: 3.3V Output load  
Notes  
1
2
3
4
5
6
7
8
9
During VCC power-up, a pull-up resistor to VCC on CE1 is required to meet ISB specification.  
This parameter is sampled and not 100% tested.  
For test conditions, see AC Test Conditions, Figures A, B, and C.  
t
CLZ and tCHZ are specified with CL = 5pF, as in Figure C. Transition is measured ±500mV from steady-state voltage.  
This parameter is guaranteed, but not 100% tested.  
WE is High for read cycle.  
CE1 and OE are Low and CE2 is High for read cycle.  
Address valid prior to or coincident with CE1 transition Low.  
All read cycle timings are referenced from the last valid address to the first transitioning address.  
10 CE1 or WE must be High or CE2 Low during address transitions. Either CE1 or WE asserting high terminates a write cycle.  
11 All write cycle timings are referenced from the last valid address to the first transitioning address.  
12 CE1 and CE2 have identical timing.  
13 2V data retention applies to commercial temperature operating range only.  
14 C=30pF, except all high Z and low Z parameters, C=5pF.  
6
ALLIANCE SEMICONDUCTOR  
10/18/00  

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