AS7C1024
AS7C31024
®
Data retention characteristics (over the operating range)13
Parameter
Symbol
Test conditions
Device
Min
2.0
–
Max
Unit
V
V
for data retention
VDR
–
5
1
–
–
1
CC
V
= 2.0V
AS7C1024
mA
mA
ns
CC
Data retention current
ICCDR
CE1 ≥ V –0.2V or
CC
AS7C31024
–
CE2 ≤ 0.2V
Chip deselect to data retention time
Operation recovery time
tCDR
tR
0
V
≥ V –0.2V or
IN
CC
V
≤ 0.2V
t
ns
IN
RC
Input leakage current
| ILI |
–
µA
Data retention waveform
Data retention mode
VDR 2.0V
VCC
VCC
≥
VCC
tCDR
tR
VDR
VIH
VIH
CE1
AC test conditions
– 5V output load: see Figure B or Figure C.
Thevenin equivalent:
168W
– Input pulse level: GND to 3.0V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5V.
DOUT
+1.728V (5V and 3.3V)
+5V
+3.3V
480W
320W
DOUT
DOUT
255W
+3.0V
90%
10%
90%
10%
255W
C(14)
GND
C(14)
GND
2 ns
Figure A: Input pulse
GND
Figure B: 5V Output load
Figure C: 3.3V Output load
Notes
1
2
3
4
5
6
7
8
9
During VCC power-up, a pull-up resistor to VCC on CE1 is required to meet ISB specification.
This parameter is sampled and not 100% tested.
For test conditions, see AC Test Conditions, Figures A, B, and C.
t
CLZ and tCHZ are specified with CL = 5pF, as in Figure C. Transition is measured ±500mV from steady-state voltage.
This parameter is guaranteed, but not 100% tested.
WE is High for read cycle.
CE1 and OE are Low and CE2 is High for read cycle.
Address valid prior to or coincident with CE1 transition Low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
10 CE1 or WE must be High or CE2 Low during address transitions. Either CE1 or WE asserting high terminates a write cycle.
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 CE1 and CE2 have identical timing.
13 2V data retention applies to commercial temperature operating range only.
14 C=30pF, except all high Z and low Z parameters, C=5pF.
6
ALLIANCE SEMICONDUCTOR
10/18/00