AS4LC2M8S1
AS4LC1M16S1
DC electrical characteristics
–7
–8
–10
Parameter
Symbol
IIL
Test conditions
Min Max Min Max Min Max Unit Notes
0V ≤ V ≤ VCC,
IN
Input leakage current
–5 +5 –5 +5 –5 +5 µA
Pins not under test = 0V
Output leakage
current
IOL
DOUT disabled, 0V ≤ V
≤ VCCQ
–10 +10 –10 +10 –10 +10 µA
1,3,
OUT
Operating current
(one bank active)
tRC ≥ min, IO = 0mA,
ICC1
–
140
–
100
–
100 mA
burst length = 1
4,5
Precharge standby
current (power
down mode)
ICC2P
CKE ≤ V (max), tCK = 15 ns
–
–
2.0
2.0
–
–
2.0
2.0
–
–
2.0 mA
2.0 mA
IL
ICC2PS
CKE and CLK ≤ V (max), tCK = ∞
IL
CS ≥ V (min), CKE ≥ V (min),
IH
IH
ICC2N
tCK = 15 ns; input signals changed
once during 30 ns
–
30
–
30
–
30 mA 1,2,3
Precharge standby
current (non-power-
down mode)
CLK ≤ V (max), CKE ≥ V (min),
IL
IH
ICC2NS
–
6
–
6
–
6
mA 1,2,3
tCK = ∞; input signals stable
Active standby
current (power-
down mode)
ICC3P
CKE ≤ V (max), tCK = 15 ns
–
–
2
2
–
–
2
2
–
–
2
2
mA 1,2,3
mA 1,2,3
IL
ICC3PS
CLK, CKE ≤ V (max), tCK = ∞
IL
CKE ≥ V (min), CS ≥ V (min),
tCK = 15 ns; input signals changed
once during 30 ns
IH
IH
Active standby
ICC3N
–
–
35
–
35
–
35 mA 1,2,3
current (non-power-
down mode, one
bank active)
CKE ≥ V (min), CLK ≥ V (max),
IH
IL
ICC3NS
10
–
10
–
10 mA 1,2,3
tCK = ∞; input signals stable
IO = 0 mA
Page burst
All banks activated
tCCD = tCCD(min)
CL =3
CL =2
CL =1
140
125
80
–
–
–
130
115
70
–
–
–
120
1,2,
Operating current
(burst mode)
100
70
ICC4
mA
3,5
1,2,
3,5
Refresh current
ICC5
ICC6
tRC ≥ tRC(min)
CKE ≤ 0.2 V
80
–
70
–
70 mA
2
1
–
–
2
1
–
–
2
1
mA
Self refresh current
mA 15
CL = CAS latency.
7/ 5/ 00
ALLIANCE SEMICONDUCTOR
7