AS4LC1M16S1-8TC

更新时间： 2024-01-30 17:27:46

品牌	Logo	应用领域
ALSC		动态存储器
页数	文件大小	规格书
28页	692K
描述
3.3V 2M x 8/1M x 16 CMOS synchronous DRAM

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AS4LC1M16S1-8TC 数据手册

AS4LC2M8S1

AS4LC1M16S1

Recommended operating conditions

Parameter

Symbol

V_CC,V_CCQ

GND

Min

3.0

0.0

2.0

–0.3^†

2.4

–

Nominal

Max

3.6

Unit

Notes

3.3

0.0

–

Supply voltage

Input voltage

0.0

V_CC+ 0.3

0.8

–

Output voltage^‡

–

0.4

Ambient operating temperature

T_A

°C

†

Min = –1.5V for pulse widths less than 5 ns.

‡

= –2mA, and I = 2mA.

Recommended operating conditions apply throughout this document unless otherwise specified.

Absolute maximum ratings

Parameter

Symbol

V ,V

Min

–1.0

–55

–

Max

Unit

Notes

Input voltage

+4.6

+150

IN OUT

Power supply voltage

V_CC,V_CCQ

T_STG

Storage temperature (plastic)

Power dissipation

°C

P_D

Short circuit output current

I_OUT

–

Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions outside those indicated in the operational sections of this specificati on is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect reliability.

ALLIANCE SEMICONDUCTOR

7/ 5/ 00

1...3 4 567 8 9...28

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