Datasheet > 存储 > DRAM> AS4C4M4F0-60TI

AS4C4M4F0-60TI

更新时间： 2024-02-07 21:10:56

品牌	Logo	应用领域
ALSC		动态存储器
页数	文件大小	规格书
18页	271K
描述
5V 4M×4 CMOS DRAM (Fast Page mode)

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数据手册

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AS4C4M4F0-60TI 数据手册

AS4C4M4F0

AS4C4M4F1

Absolute maximum ratings

Parameter

Symbol

V_in

Min

-1.0

-55

–

Max

Unit

Input voltage

+7.0

V_CC+ 0.5

+7.0

+150

260 × 10

Input voltage (DQs)

V_DQ

Power supply voltage

Storage temperature (plastic)

Soldering temperature × time

Power dissipation

V_CC

T_STG

T_SOLDER

P_D

°C

^oC × sec

–

Short circuit output current

I_out

–

DC electrical characteristics

-50

-60

Parameter

Symbol Test conditions

0V ≤ V_in≤ +5.5V,

Pins not under test = 0V

Min Max Min Max Unit Notes

Input leakage current

I_IL

-5

–

-5

–

µA

Output leakage current I_OL

D_OUTdisabled, 0V ≤ V_out≤ +5.5V

Operating power

I_CC1

RAS, CAS Address cycling; t_RC=min

135

120

1,2

supply current

TTL standby power

I_CC2

RAS = CAS ≥ V_IH

–

2.0

–

2.0

supply current

Average power supply

RAS cycling, CAS ≥ V_IH,

current, RAS refresh

mode or CBR

I_CC3

120

110

t_RC= min of RAS low after XCAS low.

Fast page mode average

power supply current

RAS = V_IL, CAS,

address cycling: t_HPC= min

I_CC4

I_CC5

–

130

1.0

–

120

1.0

1, 2

CMOS standby power

supply current

RAS = CAS = V_CC- 0.2V

V_OH

V_OL

I_OUT= -5.0 mA

I_OUT= 4.2 mA

2.4

–

2.4

–

Output voltage

0.4

CAS before RAS refresh

current

I_CC6

RAS, CAS cycling, t_RC= min

–

120

0.6

–

110

0.6

RAS = UCAS = LCAS ≤ 0.2V,

WE = OE ≥ V_CC- 0.2V,

all other inputs at 0.2V or

Self refresh current

I_CC7

–

V_CC- 0.2V

4/11/01; v.0.9

Alliance Semiconductor

P. 4 of 18

1 2 345 6 7...18

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