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AS4C256K16F0-35TI PDF预览

AS4C256K16F0-35TI

更新时间: 2024-02-25 10:14:59
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ALSC 动态存储器
页数 文件大小 规格书
25页 518K
描述
5V 256K X 16 CMOS DRAM (Fast Page Mode)

AS4C256K16F0-35TI 数据手册

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AS4C256K16FO  
®
Refresh cycle  
(V = 5V 10%, GND = 0V, T = 0° C to +70° C)  
CC a  
–25  
–30  
–35  
–50  
Standard  
Symbol  
Parameter  
Min  
10  
7
Max Min Max Min Max Min Max Unit  
Notes  
tCSR  
tCHR  
tRPC  
CAS setup time (CAS-before-RAS)  
CAS hold time (CAS-before-RAS)  
RAS precharge to CAS hold time  
10  
7
10  
8
10  
10  
0
ns  
ns  
ns  
3
3
0
0
0
CAS precharge time  
(CAS-before-RAS counter test)  
tCPT  
8
8
8
8
ns  
Output enable  
(V = 5V 10%, GND = 0V, T = 0° C to +70° C)  
CC a  
–25  
–30  
–35  
–50  
Standard  
Symbol  
Parameter  
Min Max Min Max Min Max Min Max Unit  
Notes  
tROH RAS hold time referenced to OE  
5
5
5
8
6
5
5
8
10  
5
5
8
10  
5
8
8
10  
ns  
ns  
ns  
ns  
ns  
tOEA  
tOED  
tOEZ  
tOEH  
OE access time  
OE to data delay  
Output buffer turnoff delay from OE  
OE command hold time  
8
8
8
8
Self refresh cycle  
(V = 5V 10%, GND = 0V, T = 0° C to +70° C)  
CC  
a
–25  
–30  
–35  
–50  
Standard  
Symbol  
Parameter  
Min  
Max Min Max Min Max Min Max Unit  
Notes  
tRASS RAS pulse width (CBR self refresh)  
100K  
RAS precharge time (CBR self refresh) 85  
100K  
85  
100K  
85  
100K  
85  
ns  
ns  
ns  
tRPS  
tCHS CAS hold time (CBR self refresh)  
30  
30  
30  
30  
Notes  
1
2
3
I
, I , I , and I  
depend on cycle rate.  
CC6  
CC1 CC3 CC4  
I
and I  
depend on output loading. Specified values are obtained with the output open.  
CC4  
CC1  
An initial pause of 200 µs is required after power-up followed by any 8 RAS cycles before proper device operation is achieved. In the case of an internal  
refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 8 initialization cycles are required after extended  
periods of bias without clocks (greater than 8 ms).  
4
AC characteristics assume t = 5 ns. All AC parameters are measured with a load equivalent to two TTL loads and 100 pF, V (min) GND and V (max) ≤  
T IL IH  
V
V
.
CC  
5
6
(min) and V (max) are reference levels for measuring timing of input signals. Transition times are measured between V and V .  
IL IH IL  
IH  
Operation within the t  
(max) limit insures that t  
(max) can be met. t  
(max) is specified as a reference point only. If t  
is greater than the speci-  
RCD  
RAC  
RCD  
RCD  
fied t  
(max) limit, then access time is controlled exclusively by t  
.
RCD  
CAC  
7
Operation within the t  
(max) limit insures that t  
(max) can be met. t  
RAC  
(max) is specified as a reference point only. If t  
is greater than the speci-  
RAD  
RAD  
RAD  
fied t  
(max) limit, then access time is controlled exclusively by t .  
AA  
RAD  
8
Assumes three state test load (5 pF and a 380 Thevenin equivalent).  
Either t or t must be satisfied for a read cycle.  
9
RCH  
RRH  
10  
11  
t
t
t
(max) defines the time at which the output achieves the open circuit condition; it is not referenced to output voltage levels.  
OFF  
, t  
, t  
, t  
and t  
are not restrictive operating parameters. They are included in the datasheet as electrical characteristics only. If t  
WS  
WCS WCH RWD CWD  
AWD  
(min) and t  
t  
(min), the cycle is an early write cycle and data out pins will remain open circuit, high impedance, throughout the cycle. If t  
WS  
WH  
W
H
R
W
D
t  
(min), t  
t  
(min) and t  
t  
(min), the cycle is a read-write cycle and the data out will contain data read from the selected cell. If  
AWD  
RWD  
CWD  
CWD  
AWD  
neither of the above conditions is satisfied, the condition of the data out at access time is indeterminate.  
12 These parameters are referenced to CAS leading edge in early write cycles and to WE leading edge in read-write cycles.  
13 Access time is determined by the longest of t or t or t  
.
CAP  
CAA  
CAC  
14  
t
t to achieve t (min) and t  
(max) values.  
CAP  
ASC  
CP  
PC  
15 These parameters are sampled, but not 100% tested.  
4/11/01; V.0.9.1  
Alliance Semiconductor  
P. 6 of 25  

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