Datasheet > AS4C256K16E0

AS4C256K16E0

更新时间： 2022-11-24 21:41:34

品牌	Logo	应用领域
ALSC		动态存储器
页数	文件大小	规格书
24页	632K
描述
5V 256Kx16 CMOS DRAM (EDO)

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AS4C256K16E0 数据手册

AS4C256K16E0

Functional description

The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16

bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high

speed, extremely low power and wide operating margins at component and system levels.

The AS4C256K16E0 features a high speed page mode operation in which high speed read, write and read-write are performed on any of the

512 × 16 bits defined by the column address. The asynchronous column address uses an extremely short row address capture time to ease

the system level timing constraints associated with multiplexed addressing. Very fast CAS to output access time eases system design.

Refresh on the 512 address combinations of A0 to A8 during an 8 ms period is accomplished by performing any of the following:

• RAS-only refresh cycles

• Hidden refresh cycles

• CAS-before-RAS refresh cycles

• Normal read or write cycles

• Self-refresh cycles*

The AS4C256K16E0 is available in standard 40-pin plastic SOJ and 40/44-pin TSOP II packages compatible with widely available automated

testing and insertion equipment. System level features include single power supply of 5V ± 0.5V tolerance and direct interface with TTL logic

families.

Logic block diagram

V_CC

DATA

I/O

BUFFER

COLUMN DECODER

SENSE AMP

I/O0 to I/O15

GND

512×512×16

ARRAY

RAS CLOCK

GENERATOR

RAS

(4,194,304)

CAS CLOCK

GENERATOR

UCAS

LCAS

SUBSTRATE

BIAS

GENERATOR

WE CLOCK

GENERATOR

Recommended operating conditions

(T_a= 0°C to +70°C)

Parameter

Symbol

V_CC

Min

4.5

Typ

5.0

0.0

–

Max

5.5

Unit

Supply voltage

Input voltage

GND

V_IH

0.0

2.4

V_CC+ 1

0.8

V_IL

–1.0

–

*Self-refresh option is available for new generation device only. Contact Alliance for more information.

4/11/01; v.1.1

Alliance Semiconductor

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与AS4C256K16E0相关器件

型号	品牌	描述	获取价格	数据表
AS4C256K16E0-30	ALSC	5V 256Kx16 CMOS DRAM (EDO)	获取价格
AS4C256K16E0-30JC	ALSC	5V 256Kx16 CMOS DRAM (EDO)	获取价格
AS4C256K16E0-35	ALSC	5V 256Kx16 CMOS DRAM (EDO)	获取价格
AS4C256K16E0-35JC	ALSC	5V 256Kx16 CMOS DRAM (EDO)	获取价格
AS4C256K16E0-45JC	ETC	x16 EDO Page Mode DRAM	获取价格
AS4C256K16E0-50	ALSC	5V 256Kx16 CMOS DRAM (EDO)	获取价格