Datasheet > AS3V2M16-85BI

AS3V2M16-85BI

更新时间： 2024-01-29 07:00:57

品牌	Logo	应用领域
ALSC		/
页数	文件大小	规格书
10页	160K
描述
Pseudo Static RAM, 2MX16, 85ns, CMOS, PBGA48, 6 X 8 MM, FBGA-48

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技术参数
数据手册

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AS3V2M16-85BI 技术参数

生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	TFBGA,	针数：	48
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.84
Base Number Matches：	1

AS3V2M16-85BI 数据手册

AS3V2M16

ꢈꢈ

Write cycle (over the operating range)

–55

–70

–85

Parameter

Write cycle time

Symbol

t_WC

t_CW

t_AW

Min

Max

–

Min

Max

–

Min

Max

–

Unit

Notes

Chip select to write end

Address setup to write end

Address setup time

–

t_AS

–

Write pulse width

t_WP

t_AH

t_DW

t_DH

–

Address hold from end of write

Data valid to write end

Data hold time

–

4, 5

Write enable to output in high Z

Output active from write end

UB/ LB low to end of write

t_WZ

t_OW

t_BW

–

ꢈꢉꢁꢈꢈ

Write waveform 1 (WE controlled, ZZ = High)

Address

LB, UB

Data valid

Data undefined

OUT

High Z

ꢈꢉꢁꢈꢈ

Write waveform 2 (CS controlled, ZZ = High)

Address

LB, UB

Data valid

High Z

CLZ

Data undefined

OUT

High Z

10/ 17/ 02, V. 0.9.9

Alliance Semiconductor

P. 6 of 10

1...3 4 567 8 9 10

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