5秒后页面跳转
AS3PKHM3_A/H PDF预览

AS3PKHM3_A/H

更新时间: 2024-02-29 19:07:08
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管
页数 文件大小 规格书
5页 97K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2.1A, 800V V(RRM), Silicon, TO-277A,

AS3PKHM3_A/H 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:12 weeks
风险等级:5.62其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:TO-277AJESD-30 代码:R-PDSO-F3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:70 A元件数量:1
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:2.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED参考标准:AEC-Q101
最大重复峰值反向电压:800 V最大反向电流:10 µA
最大反向恢复时间:1.2 µs表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

AS3PKHM3_A/H 数据手册

 浏览型号AS3PKHM3_A/H的Datasheet PDF文件第1页浏览型号AS3PKHM3_A/H的Datasheet PDF文件第2页浏览型号AS3PKHM3_A/H的Datasheet PDF文件第4页浏览型号AS3PKHM3_A/H的Datasheet PDF文件第5页 
AS3PD, AS3PG, AS3PJ, AS3PK, AS3PM  
www.vishay.com  
Vishay General Semiconductor  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
1000  
100  
10  
TA = 175 °C  
TM = 160 °C  
TA = 125 °C  
TA = 25 °C  
TA = 75 °C  
1
TA = 25 °C  
0.1  
0.01  
TM Measured  
at the Cathode Band Terminal  
0
25  
50  
75  
100  
125  
150  
175  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
Mount Temperature (°C)  
Percent of Rated Peak Reverse Voltage (%)  
Fig. 1 - Maximum Forward Current Derating Curve  
Fig. 4 - Typical Reverse Leakage Characteristics  
4.0  
1000  
D = 0.5  
D = 0.8  
TJ = 25 °C  
f = 1.0 MHz  
sig = 50 mVp-p  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0
D = 0.3  
D = 0.2  
V
D = 0.1  
100  
10  
1
D = 1.0  
T
D = tp/T  
2.5  
tp  
0
0.5  
1.0  
1.5  
2.0  
3.0  
3.5  
0.1  
1
10  
100  
Reverse Voltage (V)  
Average Forward Current (A)  
Fig. 2 - Forward Power Loss Characteristics  
Fig. 5 - Typical Junction Capacitance  
Junction to Ambient  
100  
100  
10  
1
TA = 175 °C  
10  
1
TA = 125 °C  
TA = 75 °C  
TA = 25 °C  
0.1  
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5  
0.01  
0.1  
1
10  
100  
t - Pulse Duration (s)  
Instantaneous Forward Voltage (V)  
Fig. 3 - Typical Instantaneous Forward Characteristics  
Fig. 6 - Typical Transient Thermal Impedance  
Revision: 27-Jul-15  
Document Number: 88837  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

AS3PKHM3_A/H 替代型号

型号 品牌 替代类型 描述 数据表
AS3PKHM3/86A VISHAY

功能相似

DIODE 2.1 A, 800 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PL

与AS3PKHM3_A/H相关器件

型号 品牌 获取价格 描述 数据表
AS3PKHM3_A/I VISHAY

获取价格

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2.1A, 800V V(RRM), Silicon, TO-277A,
AS3PK-M3/86A VISHAY

获取价格

DIODE 2.1 A, 800 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PL
AS3PK-M3/87A VISHAY

获取价格

DIODE 2.1 A, 800 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PL
AS3PM VISHAY

获取价格

High Current Density Standard Avalanche Surface Mount Rectifiers
AS-3R250DLF TTELEC

获取价格

Semi-Precision Power Wirewound Resistor
AS-3R250FLF TTELEC

获取价格

Semi-Precision Power Wirewound Resistor
AS-3R250HLF TTELEC

获取价格

Semi-Precision Power Wirewound Resistor
AS-3R250JLF TTELEC

获取价格

Semi-Precision Power Wirewound Resistor
AS3SSD16GB5PBG AUSTIN

获取价格

Solid State Disk On Chip (SSDoC)
AS3SSD16GB5PBG/CT MICROSS

获取价格

Microprocessor Circuit, CMOS, PBGA381, 31 X 31 MM, PACKAGE-381