Datasheet > AS3622S-Q1

AS3622S-Q1

更新时间： 2024-10-02 18:06:59

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
5页	1121K
描述
DFN3.3*3.3-8L

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中文翻译

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数据手册

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AS3622S-Q1 数据手册

AS3622S-Q1

N-Channel Enhancement Mode MOSFET

Product Summary

V_(BR)DSS

R_DS(on)MAX

13mΩ@10V

18mΩ@4.5V

I_D

30V

30A

Feature

Application



High density cell design for ultra low Rdson



High current load applications

Load switching

Trench Power LV MOSFET technology

Excellent package for heat dissipation

Suffix "-Q1" for AEC-Q101



Hard switched and high frequency circuits

Uninterruptible power supply

Package

Circuit diagram

DFN3.3X3.3-8L

Marking

D1 D2 D2

Q3622

XXXX

S1 G1 S2 G2

Document ID

AS-1150224

Issued Date

2013/03/03

Revised Date

2020/03/06

Revision

Page.

Page 1

12 3 4 5

中文翻译

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