Datasheet > AS35N04S-Q1

AS35N04S-Q1

更新时间： 2024-06-27 12:08:45

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
5页	789K
描述
DFN3.3*3.3-8L

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数据手册

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AS35N04S-Q1 数据手册

AS35N04S-Q1

N-Channel Enhancement Mode MOSFET

Product Summary

V_(BR)DSS

R_DS(on)MAX

I_D

8mΩ@10V

40V

35A

13mΩ@4.5V

Feature

Application



High density cell design for low Rdson

Excellent package for heat dissipation

Suffix ”-Q1” for AEC-Q101



High current load applications

Load switching

Hard switched and high frequency circuits

Uninterruptible power supply

Package

Circuit diagram

DFN3.3X3.3-8L

Marking

Q35N04

XXXX

Document ID

AS-1150183

Issued Date

2013/03/03

Revised Date

2021/05/16

Revision

Page.

Page 1

12 3 4 5

中文翻译

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