5秒后页面跳转
捷配首页

Datasheet > AS29LV800B-90SI
AS29LV800B-90SI PDF预览

AS29LV800B-90SI

更新时间： 2024-02-18 02:42:40
品牌 Logo 应用领域
ANADIGICS 闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
25页 440K
描述
3V 1M】8/512K】16 CMOS Flash EEPROM

阅读下载

中文翻译

获取价格

AS29LV800B-90SI 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：TSOP1, TSSOP48,.8,20
针数：48Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.76Is Samacsys：N
最长访问时间：90 ns备用内存宽度：8
启动块：BOTTOM命令用户界面：YES
数据轮询：YES耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G48JESD-609代码：e0
长度：18.4 mm内存密度：8388608 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1部门数/规模：1,2,1,15
端子数量：48字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX16封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装等效代码：TSSOP48,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
电源：3/3.3 V编程电压：3 V
认证状态：Not Qualified就绪/忙碌：YES
座面最大高度：1.2 mm部门规模：16K,8K,32K,64K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.1 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：YES类型：NOR TYPE
宽度：12 mmBase Number Matches：1

AS29LV800B-90SI 数据手册

 浏览型号AS29LV800B-90SI的Datasheet PDF文件第6页浏览型号AS29LV800B-90SI的Datasheet PDF文件第7页浏览型号AS29LV800B-90SI的Datasheet PDF文件第8页浏览型号AS29LV800B-90SI的Datasheet PDF文件第10页浏览型号AS29LV800B-90SI的Datasheet PDF文件第11页浏览型号AS29LV800B-90SI的Datasheet PDF文件第12页 
March 2001  
AS29LV800  
®
Item  
Description  
Erase Suspend allows interruption of sector erase operations to read data from or program data to a  
sector not being erased. Erase suspend applies only during sector erase operations, including the  
time-out period. Writing an Erase Suspend command during sector erase time-out results in  
immediate termination of the time-out period and suspension of erase operation.  
AS29LV800 ignores any commands during erase suspend other than Read/Reset, Program or Erase  
Resume commands. Writing the Erase Resume Command continues erase operations. Addresses are  
Don’t Care when writing Erase Suspend or Erase Resume commands.  
AS29LV800 takes 0.2–15 µs to suspend erase operations after receiving Erase Suspend command.  
To determine completion of erase suspend, either check DQ6 after selecting an address of a sector  
not being erased, or poll RY/BY. Check DQ2 in conjunction with DQ6 to determine if a sector is  
being erased. AS29LV800 ignores redundant writes of Erase Suspend.  
Erase Suspend  
While in erase-suspend mode, AS29LV800 allows reading data (erase-suspend-read mode) from or  
programming data (erase-suspend-program mode) to any sector not undergoing sector erase;  
these operations are treated as standard read or standard programming mode. AS29LV800 defaults  
to erase-suspend-read mode while an erase operation has been suspended.  
Write the Resume command 30h to continue operation of sector erase. AS29LV800 ignores  
redundant writes of the Resume command. AS29LV800 permits multiple suspend/resume  
operations during sector erase.  
When attempting to write to a protected sector, DATA polling and Toggle Bit 1 (DQ6) are activated  
for about <1 µs. When attempting to erase a protected sector, DATA polling and  
Toggle Bit 1 (DQ6) are activated for about <5 µs. In both cases, the device returns to read mode  
without altering the specified sectors.  
Sector Protect  
Ready/Busy  
RY/BY indicates whether an automated on-chip algorithm is in progress (RY/BY = low) or  
completed (RY/BY = high). The device does not accept Program/Erase commands when  
RY/BY = low. RY/BY= high when device is in erase suspend mode. RY/BY = high when device  
exceeds time limit, indicating that a program or erase operation has failed. RY/BY is an open drain  
output, enabling multiple RY/BY pins to be tied in parallel with a pull up resistor to VCC.  
3/22/01; V.1.0  
Alliance Semiconductor  
P. 9 of 25  
1...6789101112...25

中文翻译

下载PDF

与AS29LV800B-90SI相关器件

型号 品牌 获取价格 描述 数据表
AS29LV800B-90TC ANADIGICS

获取价格

 		3V 1M】8/512K】16 CMOS Flash EEPROM
AS29LV800B-90TI ANADIGICS

获取价格

 		3V 1M】8/512K】16 CMOS Flash EEPROM
AS29LV800T-120SC ANADIGICS

获取价格

 		3V 1M】8/512K】16 CMOS Flash EEPROM
AS29LV800T-120SI ANADIGICS

获取价格

 		3V 1M】8/512K】16 CMOS Flash EEPROM
AS29LV800T-120TC ANADIGICS

获取价格

 		3V 1M】8/512K】16 CMOS Flash EEPROM
AS29LV800T-120TC ALSC

获取价格

 		Flash, 512KX16, 120ns, PDSO48, 12 X 20 MM, TSOP1-48
AS29LV800T-120TI ANADIGICS

获取价格

 		3V 1M】8/512K】16 CMOS Flash EEPROM
AS29LV800T-70RSC ANADIGICS

获取价格

 		3V 1M】8/512K】16 CMOS Flash EEPROM
AS29LV800T-70RSI ANADIGICS

获取价格

 		3V 1M】8/512K】16 CMOS Flash EEPROM
AS29LV800T-70RTC ANADIGICS

获取价格

 		3V 1M】8/512K】16 CMOS Flash EEPROM

与AS29LV800B-90SI相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证