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AS29LV016JBRG-70/IT PDF预览

AS29LV016JBRG-70/IT

更新时间: 2024-01-22 12:07:03
品牌 Logo 应用领域
AUSTIN 闪存内存集成电路光电二极管
页数 文件大小 规格书
40页 408K
描述
16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory

AS29LV016JBRG-70/IT 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:TSOP1包装说明:TSOP1, TSSOP56,.8,20
针数:48Reach Compliance Code:compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.2最长访问时间:70 ns
其他特性:BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-XDSO-G48长度:18.4 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,31端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:1MX16
封装主体材料:UNSPECIFIED封装代码:TSOP1
封装等效代码:TSSOP56,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

AS29LV016JBRG-70/IT 数据手册

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COTS PEM  
BOOT SECTOR FLASH  
Austin Semiconductor, Inc.  
AS29LV016J  
ERASE AND PROGRAMMING PERFORMANCE  
Typ1  
0.5  
16  
6
Max2  
Parameter  
Sector Erase Time  
Unit  
s
Comments  
Excludes 00h programming  
prior to erasure4  
10  
Chip Erase Time  
s
Byte Programming Time  
Word Programming Time  
Excludes system level  
overhead5  
µs  
µs  
6
150  
Notes:  
1.Typical program and erase times assume the following conditions: 25°C, VCC = 3.0 V, 100,000 cycles, checkerboard data pattern.  
2.Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.  
3.The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program  
faster than the maximum program times listed.  
4.In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.  
5.System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 9  
on page 21 for further information on command definitions.  
6.The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.  
TSOP PIN CAPACITANCE  
Parameter  
Symbol  
Parameter Description  
Test Setup Package  
Typ  
Max  
Unit  
CIN  
VIN=0  
VOUT=0  
VIN=0  
Input Capacitance  
TSOP  
TSOP  
TSOP  
6
7.5  
pF  
COUT  
CIN2  
Notes:  
Output Capacitance  
8.5  
7.5  
12  
9
pF  
pF  
Control Pin Capacitance  
1. Samples, not 100% tested.  
2. Test conditions TA =2o C, f=1.0 MHz  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS29LV016J  
Rev. 0.0 02/09  
38  

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