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AS29F400T-90TI PDF预览

AS29F400T-90TI

更新时间： 2024-01-22 23:51:56
品牌 Logo 应用领域
ALSC 光电二极管内存集成电路
页数 文件大小 规格书
20页 444K
描述
Flash, 512KX8, 90ns, PDSO48, 12 X 20 MM, TSOP1-48

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AS29F400T-90TI 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：12 X 20 MM, TSOP1-48
针数：48Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.92最长访问时间：90 ns
其他特性：10K WRITE/ERASE CYCLE ENDURANCE; ALSO CONFIGURABLE AS 256K X 16备用内存宽度：8
启动块：TOP命令用户界面：YES
数据轮询：YES耐久性：10000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G48JESD-609代码：e0
长度：18.4 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1部门数/规模：1,2,1,7
端子数量：48字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX8输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：240电源：5 V
编程电压：5 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.2 mm
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.05 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：YES
类型：NOR TYPE宽度：12 mm
Base Number Matches：1

AS29F400T-90TI 数据手册

 浏览型号AS29F400T-90TI的Datasheet PDF文件第4页浏览型号AS29F400T-90TI的Datasheet PDF文件第5页浏览型号AS29F400T-90TI的Datasheet PDF文件第6页浏览型号AS29F400T-90TI的Datasheet PDF文件第8页浏览型号AS29F400T-90TI的Datasheet PDF文件第9页浏览型号AS29F400T-90TI的Datasheet PDF文件第10页 
AS29F400  
Preliminary information  
®
Item  
Description  
Sector erase requires six bus cycles: two unlock write cycles, a setup command, two additional  
unlock write cycles, and finally the Sector Erase command. Identify the sector to be erased by  
addressing any location in the sector. The address is latched on the falling edge of WE; the  
command, 30h is latched on the rising edge of WE. The sector erase operation begins after a 80 µs  
time-out.  
To erase multiple sectors, write the Sector Erase command to each of the addresses of sectors to  
erase after following the six bus cycle operation above. Timing between writes of additional  
sectors must be <80 µs, or the AS29F400 ignores the command and erasure begins. During the  
80 µs time-out period any falling edge of WE resets the time-out. Any command (other than  
Sector Erase or Erase Suspend) during time-out period resets the AS29F400 to read mode, and the  
device ignores the sector erase command string. Erase such ignored sectors by restarting the Sector  
Erase command on the ignored sectors.  
Sector Erase  
The entire array need not be written with 0s prior to erasure. AS29F400 writes 0s to the entire  
sector prior to electrical erase; writing of 0s affects only selected sectors, leaving non-selected  
sectors unaffected. AS29F400 requires no CPU control or timing signals during sector erase  
operations.  
Automatic sector erase begins after 80 µs time-out from the last rising edge of WE from the sector  
erase command stream and ends when the DATA polling (DQ7) is logical 1. DATA polling address  
must be performed on addresses that fall within the sectors being erased. AS29F400 returns to read  
mode after sector erase unless DQ5 is set high by exceeding the time limit.  
Erase Suspend allows interruption of sector erase operations to read data from or program data to a  
sector not being erased. Erase suspend applies only during sector erase operations, including the  
time-out period. Writing an Erase Suspend command during sector erase time-out results in  
immediate termination of the time-out period and suspension of erase operation.  
AS29F400 ignores any commands during erase suspend other than Read/Reset, Program or Erase  
Resume commands. Writing the Erase Resume Command continues erase operations. Addresses  
are DON’T CARE when writing Erase Suspend or Erase Resume commands.  
AS29F400 takes 0.1–15 µs to suspend erase operations after receiving Erase Suspend command. To  
determine completion of erase suspend, either check DQ6 after selecting an address of a sector not  
being erased, or poll RY/BY. Check DQ2 in conjunction with DQ6 to determine if a sector is  
being erased. AS29F400 ignores redundant writes of Erase Suspend.  
Erase Suspend  
While in erase-suspend mode, AS29F400 allows reading data (erase-suspend-read mode) from or  
programming data (erase-suspend-program mode) to any sector not undergoing sector erase,  
treated as standard read or standard programming mode. AS29F400 defaults to erase-suspend-read  
mode while an erase operation has been suspended.  
Write the Resume command 30h to continue operation of sector erase. AS29F400 ignores  
redundant writes of the Resume command. AS29F400 permits multiple suspend/resume  
operations during sector erase.  
When attempting to write to a protected sector, DATA polling and Toggle Bit 1 (DQ6) are  
activated for about <1 µs. When attempting to erase a protected sector, DATA polling and  
Toggle Bit 1 (DQ6) are activated for about <5 µs. In both cases, the device returns to read mode  
without altering the specified sectors.  
Sector Protect  
Ready/Busy  
RY/BY indicates whether an automated on-chip algorithm is in progress (RY/BY = low) or  
completed (RY/BY = high). The device does not accept Program/Erase commands when  
RY/BY = low. RY/BY= high when device is in erase suspend mode. RY/BY is an open drain  
output, enabling multiple RY/BY pins to be tied in parallel with a pull up resistor to V  
.
CC  
7
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