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AS29F400B-150TI PDF预览

AS29F400B-150TI

更新时间： 2024-01-04 08:17:39
品牌 Logo 应用领域
ALSC 光电二极管内存集成电路
页数 文件大小 规格书
20页 444K
描述
Flash, 512KX8, 150ns, PDSO48, 12 X 20 MM, TSOP1-48

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AS29F400B-150TI 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：12 X 20 MM, TSOP1-48
针数：48Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.92最长访问时间：150 ns
其他特性：10K WRITE/ERASE CYCLE ENDURANCE; ALSO CONFIGURABLE AS 256K X 16备用内存宽度：8
启动块：BOTTOM命令用户界面：YES
数据轮询：YES耐久性：10000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G48JESD-609代码：e0
长度：18.4 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1部门数/规模：1,2,1,7
端子数量：48字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX8输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：240电源：5 V
编程电压：5 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.2 mm
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.05 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：YES
类型：NOR TYPE宽度：12 mm
Base Number Matches：1

AS29F400B-150TI 数据手册

 浏览型号AS29F400B-150TI的Datasheet PDF文件第1页浏览型号AS29F400B-150TI的Datasheet PDF文件第2页浏览型号AS29F400B-150TI的Datasheet PDF文件第4页浏览型号AS29F400B-150TI的Datasheet PDF文件第5页浏览型号AS29F400B-150TI的Datasheet PDF文件第6页浏览型号AS29F400B-150TI的Datasheet PDF文件第7页 
AS29F400  
Preliminary information  
Operating modes  
®
Mode  
CE  
OE  
L
WE  
A0  
L
A1  
A6  
L
A9  
RESET  
H
DQ  
ID read MFR code  
ID read device code  
Read  
L
L
L
H
L
L
L
L
L
H
L
V
V
Code  
Code  
ID  
ID  
L
H
H
A0  
X
L
L
H
L
H
A1  
X
A6  
X
A9  
X
H
D
OUT  
Standby  
X
H
H
X
H
High Z  
High Z  
Output disable  
Write  
H
X
X
X
X
H
L
A0  
L
A1  
H
H
H
A6  
L
A9  
H
D
X
X
IN  
Enable sector protect  
Sector unprotect  
Verify sector protect  
V
V
L
Pulse/L  
Pulse/L  
H
V
V
V
H
ID  
ID  
ID  
ID  
ID  
L
H
L
H
L
H
Code  
Temporary sector  
unprotect  
X
X
X
X
X
X
X
X
X
X
X
X
X
X
V
L
X
ID  
Hardware Reset  
High Z  
L = Low (<VIL); H = High (>VIH); VID = 12.0 ± 0.5V; X = don’t care; In ×16 mode, BYTE = VIH. In ×8 mode, BYTE = VIL and DQ8–14 is High Z with  
DQ15 = A-1(X).  
Mode definitions  
Item  
Description  
Selected by A9 = V (11.5–12.5V), CE = OE = A1 = A6 = L, enabling outputs.  
ID  
ID MFR code,  
device code  
When A0 is low (V ) the output data = 52h, a unique Mfr. code for Alliance Semiconductor Flash products.  
IL  
When A0 is high (V ), D  
represents the device code for the 29F400.  
IH  
OUT  
Selected with CE = OE = L, WE = H. Data is valid in t  
time after addresses are stable, t after CE is low  
CE  
ACC  
Read mode  
Standby  
and t after OE is low.  
OE  
Selected with CE = H. Part is powered down, and I reduced to <1.0 mA for TTL input levels and <100 µA  
CC  
for CMOS levels. If activated during an automated on-chip algorithm, the device completes the operation  
before entering standby.  
Output disable Part remains powered up; but outputs disabled with OE pulled high.  
Selected with CE = WE = L, OE = H. Accomplish all Flash erasure and programming through the command  
register. Contents of command register serve as inputs to the internal state machine. Address latching occurs  
on the falling edge of WE or CE, whichever occurs later. Data latching occurs on the rising edge WE or CE,  
Write  
whichever occurs first. Filters on WE prevent spurious noise events from appearing as write commands.  
Enable  
Hardware protection circuitry implemented with external programming equipment causes the device to  
sector protect disable program and erase operations for specified sectors.  
Sector  
Disables sector protection using external programming equipment.  
unprotect  
Verifies write protection for sector. Sectors are protected from program/erase operations on commercial  
Verify  
programming equipment. Determine if sector protection exists in a system by writing the ID read command  
sector protect sequence and reading location XXX02h, where address bits A12–17 select the defined sector addresses. A  
logical 1 on DQ0 indicates a protected sector; a logical 0 indicates an unprotected sector.  
Temporarily disables sector protection for in-system data changes to protected sectors. Apply +12V to RESET  
to activate temporary sector unprotect mode. During temporary sector unprotect mode, program protected  
sectors by selecting the appropriate sector address. All protected sectors revert to protected state on removal  
of +12V from RESET.  
Temporary  
sector  
unprotect  
3
1234567...20

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与AS29F400B-150TI相关器件

型号 品牌 描述 获取价格 数据表
AS29F400B-55SC ALSC Flash, 512KX8, 55ns, PDSO44, 0.600 INCH, SO-44

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AS29F400B-55TC ALSC Flash, 512KX8, 55ns, PDSO48, 12 X 20 MM, TSOP1-48

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AS29F400B-70SI ALSC Flash, 512KX8, 70ns, PDSO44, 0.600 INCH, SO-44

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AS29F400B-70TC ALSC Flash, 512KX8, 70ns, PDSO48, 12 X 20 MM, TSOP1-48

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AS29F400B-70TI ALSC Flash, 512KX8, 70ns, PDSO48, 12 X 20 MM, TSOP1-48

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AS29F400B-90SC ALSC Flash, 512KX8, 90ns, PDSO44, 0.600 INCH, SO-44

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