Datasheet > 存储 > 闪存> AS29F200B-90TI

AS29F200B-90TI

更新时间： 2024-02-18 19:42:35

品牌	Logo	应用领域
ALSC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
20页	357K
描述
5V 256K x 8/128K x 8 CMOS FLASH EEPROM

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AS29F200B-90TI 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TSOP	包装说明：	12 X 20 MM, TSOP-48
针数：	48	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.81	最长访问时间：	90 ns
其他特性：	10K WRITE/ERASE CYCLE ENDURANCE	备用内存宽度：	8
启动块：	BOTTOM	命令用户界面：	YES
数据轮询：	YES	耐久性：	10000 Write/Erase Cycles
JESD-30 代码：	R-PDSO-G48	JESD-609代码：	e0
长度：	18.4 mm	内存密度：	2097152 bit
内存集成电路类型：	FLASH	内存宽度：	16
功能数量：	1	部门数/规模：	1,2,1,3
端子数量：	48	字数：	131072 words
字数代码：	128000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	128KX16	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP1
封装等效代码：	TSSOP48,.8,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	240	电源：	5 V
编程电压：	5 V	认证状态：	Not Qualified
就绪/忙碌：	YES	座面最大高度：	1.2 mm
部门规模：	16K,8K,32K,64K	最大待机电流：	0.000001 A
子类别：	Flash Memories	最大压摆率：	0.06 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	切换位：	YES
类型：	NOR TYPE	宽度：	12 mm

AS29F200B-90TI 数据手册

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Item

Description

Erase suspend allows interruption of sector erase operations to perform data reads from a sector not

being erased. Erase suspend applies only during sector erase operations, including the time-out

period. Writing an Erase Suspend command during sector erase time-out results in immediate

termination of time-out period and suspension of erase operation.

AS29F200 ignores any commands during erase suspend other than the Reset or Erase Resume

commands. Writing erase resume continues erase operations. Addresses are DON’T CARE when

writing Erase Suspend or Erase Resume commands.

AS29F200 takes 0.2–15 µs to suspend erase operations after receiving Erase Suspend command.

Check completion of erase suspend by polling RY/ BY. Check DQ2 in conjunction with DQ6 to

determine if a sector is being erased. AS29F200 ignores redundant writes of erase suspend.

Erase Suspend

AS29F200 defaults to erase-suspend-read mode while an erase operation has been suspended.

While in erase-suspend-read mode AS29F200 allows reading data from or programming data to

any sector not undergoing sector erase.

Write the Resume command 30h to continue operation of sector erase. AS29F200 ignores

redundant writes of the Resume command. AS29F200 permits multiple suspend/ resume

operations during sector erase.

When attempting to write to a protected sector, DATA polling andToggle Bit 1 (DQ6) are activated

for about <1 µs. When attempting to erase a protected sector, DATA polling and

Toggle Bit 1 (DQ6) are activated for about <5 µs. In both cases, the device returns to read mode

without altering the specified sectors.

Sector Protect

Ready/ Busy

RY/ BY indicates whether an automated on-chip algorithm is in progress (RY/ BY = low) or

completed (RY/ BY = high). The device does not accept program/ erase commands when

RY/ BY = low. RY/ BY= high when device is in erase suspend mode. RY/ BY is an open drain output,

enabling multiple RY/ BY pins to be tied in parallel with a pull up resistor to V_CC.

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Only active during automated on-chip algorithms or sector erase time outs. DQ7 reflects

complement of data last written when read during the automated on-chip algorithm (0 during

erase algorithm); reflects true data when read after completion of an automated on-chip algorithm

(1 after completion of erase agorithm).

DATA polling (DQ7)

Active during automated on-chip algorithms or sector erase time outs. DQ6 toggles when CE or OE

toggles, or an Erase Resume command is invoked. DQ6 is valid after the rising edge of the fourth

pulse of WE during programming; after the rising edge of the sixth WE pulse during chip erase;

after the last rising edge of the sector erase WE pulse for sector erase. For protected sectors, DQ6

toggles for only <1 µs during writes, and <5 µs during erase (if all selected sectors are protected).

Toggle bit (DQ6)

Indicates unsuccessful completion of program/ erase operation (DQ5 = 1). DATA polling remains

active; CE powers the device down to 2 mA. If DQ5 = 1 during chip erase, all or some sectors are

defective; during byte programming, the entire sector is defective; during sector erase, the sector is

defective (in this case, reset the device and execute a program or erase command sequence to

continue working with functional sectors). Attempting to program 0 to 1 will set DQ5 = 1.

Exceeding time limit

(DQ5)

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型号	品牌	描述	获取价格	数据表
AS29F200T-120SC	ALSC	5V 256K x 8/128K x 8 CMOS FLASH EEPROM	获取价格
AS29F200T-120SI	ALSC	5V 256K x 8/128K x 8 CMOS FLASH EEPROM	获取价格
AS29F200T-120TC	ALSC	5V 256K x 8/128K x 8 CMOS FLASH EEPROM	获取价格
AS29F200T-120TI	ALSC	5V 256K x 8/128K x 8 CMOS FLASH EEPROM	获取价格
AS29F200T-55SC	ALSC	5V 256K x 8/128K x 8 CMOS FLASH EEPROM	获取价格
AS29F200T-55SI	ALSC	5V 256K x 8/128K x 8 CMOS FLASH EEPROM	获取价格

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