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AS29F040CW-70/883C PDF预览

AS29F040CW-70/883C

更新时间: 2024-02-12 17:38:58
品牌 Logo 应用领域
AUSTIN 内存集成电路
页数 文件大小 规格书
27页 1428K
描述
512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY

AS29F040CW-70/883C 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:DIP包装说明:DIP, DIP32,.6
针数:32Reach Compliance Code:compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.39Is Samacsys:N
最长访问时间:70 ns命令用户界面:YES
数据轮询:YES耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-CDIP-T32长度:42.418 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:8端子数量:32
字数:524288 words字数代码:512000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:512KX8
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DIP
封装等效代码:DIP32,.6封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:5 V认证状态:Not Qualified
筛选级别:MIL-STD-883座面最大高度:5.08 mm
部门规模:64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.04 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:15.24 mmBase Number Matches:1

AS29F040CW-70/883C 数据手册

 浏览型号AS29F040CW-70/883C的Datasheet PDF文件第2页浏览型号AS29F040CW-70/883C的Datasheet PDF文件第3页浏览型号AS29F040CW-70/883C的Datasheet PDF文件第4页浏览型号AS29F040CW-70/883C的Datasheet PDF文件第6页浏览型号AS29F040CW-70/883C的Datasheet PDF文件第7页浏览型号AS29F040CW-70/883C的Datasheet PDF文件第8页 
FLASH  
AS29F040  
Austin Semiconductor, Inc.  
Definitions table shows the remaining address bits that are  
don’t care. When all necessary bits have been set as required,  
the programming equipment may then read the corresponding  
identifier code on DQ7 - DQ0  
To access the autoselect codes in-system, the host system  
can issue the autoselect command via the command register, as  
shown in the Command Definitions table. This method does  
Standby Mode  
When the system is not reading or writing to the device, it  
can place the device in the standby mode. In this mode, current  
consumption is greatly reduced, and the outputs are placed in  
the high impedance state, independent of the OE\ input.  
The device enters the CMOS standby mode when the CE\  
pin is held at VCC ± 0.5V. (Note that this is a more restricted  
not require VID. See “Command Definitions” for details on  
using the autoselect mode.  
voltage range than VIH.) The device enters the TTL standby  
mode when CE\ is held at VIH. The device requires the standard  
access time (tCE) before it is ready to read data.  
If the device is deselected during erasure or programming,  
the device draws active current until the operation is completed.  
Sector Protection/Unprotection  
The hardware sector protection feature disables both  
program and erase operations in any sector. The hardware  
sector unprotection feature re-enables both program and erase  
operations in previously protected sectors.  
I
CC3 in the DC Characteristics table represents the standby  
current specification.  
Sector protection/unprotection must be implemented  
using programming equipment. The procedure requires a high  
Output Disable Mode  
When the OE\ input is at VIH, output from the device is  
disabled. The output pins are placed in the high impedance  
state.  
voltage (VID) on address pin A9 and the control pins. The  
device is shipped with all sectors unprotected. It is possible to  
determine whether a sector is protected or unprotected. See  
“Autoselect Mode” for details.  
Autoselect Mode  
The autoselect mode provides manufacturer and device  
identification, and sector protection verification, through  
identifier codes output on DQ7 - DQ0. This mode is primarily  
intended for programming equipment to automatically match a  
device to be programmed with its corresponding programming  
algorithm. However, the autoselect codes can also be accessed  
in-system through the command register.  
Hardware Data Protection  
The command sequence requirement of unlock cycles for  
programming or erasing provides data protection against  
inadvertent writes (refer to the Command Definitions table). In  
addition, the following hardware data protection measures  
prevent accidental erasure or programming, which might  
otherwise be caused by spurious system level signals during  
When using programming equipment, the autoselect mode  
VCC power-up and power-down transitions, or from system  
noise.  
requires VID (11.5V to 12.5 V) on address pin A9. Address pins  
A6, A1, and A0 must be as shown in the Autoselect Codes  
(High Voltage Method) table. In addition, when verifying  
sector protection, the sector address must appear on the  
appropriate highest order address bits. Refer to the  
corresponding Sector Address Tables. The Command  
Low VCC Write Inhibit  
When VCC is less than VLKO, the device does not accept  
any write cycles. This protects data during VCC power-up and  
TABLE 2: SECTOR ADDRESSES TABLE  
SECTOR  
SA0  
A18  
0
0
0
0
1
1
1
1
A17  
0
0
1
1
0
0
1
1
A16  
0
1
0
1
0
1
0
1
ADDRESS RANGE  
00000h - 0FFFFh  
10000h - 1FFFFh  
20000h - 2FFFFh  
30000h - 3FFFFh  
40000h - 4FFFFh  
50000h - 5FFFFh  
60000h - 6FFFFh  
70000h - 7FFFFh  
SA1  
SA2  
SA3  
SA4  
SA5  
SA6  
SA7  
NOTE: All sectors are 64 Kbytes in size.  
AS29F040  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 2.2 09/07  
5

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