Datasheet > APTSM120AM09CD3AG

APTSM120AM09CD3AG

更新时间： 2024-02-05 07:48:57

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
7页	594K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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APTSM120AM09CD3AG 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.83
Base Number Matches：	1

APTSM120AM09CD3AG 数据手册

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APTSM120AM09CD3AG

V_DSS= 1200V

R_DSon= 9mΩ typ @ Tj = 25°C

I_D= 337A @ Tc = 25°C

Phase leg

SiC Power Module

Application

•

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features

•

SiC Power MOSFET

Low R_DS(on)

High temperature performance

•

SiC Schottky Diode

Zero reverse recovery

Zero forward recovery

Temperature Independent switching behavior

Positive temperature coefficient on VF

•

Kelvin emitter for easy drive

High level of integration

AlN substrate for improved thermal performance

M6 power connectors

Benefits

•

Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

RoHS Compliant

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings

Symbol

Parameter

Max ratings

1200

Unit

V_DSS

Drain - Source Voltage

T_c= 25°C

T_c= 80°C

337

268

I_D

Continuous Drain Current

I_DM

V_GS

R_DSon

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

670

-10/25V

mΩ

P_D

Power Dissipation

T_c= 25°C

2140

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note APT0502 on www.microsemi.com

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