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APTSM120AM25CT3AG PDF预览

APTSM120AM25CT3AG

更新时间: 2024-11-21 20:10:07
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
7页 569K
描述
Power Field-Effect Transistor,

APTSM120AM25CT3AG 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.84
Base Number Matches:1

APTSM120AM25CT3AG 数据手册

 浏览型号APTSM120AM25CT3AG的Datasheet PDF文件第2页浏览型号APTSM120AM25CT3AG的Datasheet PDF文件第3页浏览型号APTSM120AM25CT3AG的Datasheet PDF文件第4页浏览型号APTSM120AM25CT3AG的Datasheet PDF文件第5页浏览型号APTSM120AM25CT3AG的Datasheet PDF文件第6页浏览型号APTSM120AM25CT3AG的Datasheet PDF文件第7页 
APTSM120AM25CT3AG  
VDSS = 1200V  
Phase leg  
SiC MOSFET Power Module  
R
DSon = 25mΩ max @ Tj = 25°C  
ID = 148A @ Tc = 25°C  
Application  
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
Features  
SiC Power MOSFET  
-
-
-
High speed switching  
Low RDS(on)  
Ultra low loss  
SiC Schottky Diode  
-
-
-
-
Zero reverse recovery  
Zero forward recovery  
Temperature Independent switching behavior  
Positive temperature coefficient on VF  
Very low stray inductance  
Kelvin source for easy drive  
Internal thermistor for temperature monitoring  
AlN substrate for improved thermal performance  
Benefits  
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
Low profile  
RoHS Compliant  
Pins 25 to 28 must be shorted together  
Pins 13 to 16 must be shorted together  
Pins 18/19/20/22 must be shorted together  
All ratings @ Tj = 25°C unless otherwise specified  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
See application note APT0502 on www.microsemi.com  
1 - 7  
www.microsemi.com  

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