Datasheet > APTSM120AM25CT3AG

APTSM120AM25CT3AG

更新时间： 2024-11-09 20:10:07

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
7页	569K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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APTSM120AM25CT3AG 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84
Base Number Matches：	1

APTSM120AM25CT3AG 数据手册

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APTSM120AM25CT3AG

V_DSS= 1200V

Phase leg

SiC MOSFET Power Module

_DSon= 25mΩ max @ Tj = 25°C

I_D= 148A @ Tc = 25°C

Application

•

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features

•

SiC Power MOSFET

High speed switching

Low R_DS(on)

Ultra low loss

•

SiC Schottky Diode

Zero reverse recovery

Zero forward recovery

Temperature Independent switching behavior

Positive temperature coefficient on VF

•

Very low stray inductance

Kelvin source for easy drive

Internal thermistor for temperature monitoring

AlN substrate for improved thermal performance

Benefits

•

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting

•

Low profile

RoHS Compliant

Pins 25 to 28 must be shorted together

Pins 13 to 16 must be shorted together

Pins 18/19/20/22 must be shorted together

All ratings @ T_j= 25°C unless otherwise specified

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note APT0502 on www.microsemi.com

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