AP86T03GH

更新时间： 2024-02-15 06:59:22

品牌	Logo	应用领域
富鼎先进 - A-POWER		驱动
页数	文件大小	规格书
4页	100K
描述
Low On-resistance, Simple Drive Requirement

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AP86T03GH 数据手册

AP86T03GH/J

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low On-resistance

BV_DSS

R_DS(ON)

I_D

30V

6.5mΩ

75A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

□

TO-252(H)

The TO-252 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP86T03GJ)

are available for low-profile applications.

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current

Pulsed Drain Current¹

300

P_D@T_C=25℃

T_STG

Total Power Dissipation

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 175

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

2.0

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Rthj-a

62.5

110

Rthj-a

Maximum Thermal Resistance, Junction-ambient

Data & specifications subject to change without notice

200902262

12 3 4

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